Abstract
The extraordinary characteristics of carbon nanotubes make them a promising candidate for applications in microelectronics. Catalyst-mediated CVD growth is very well suited for selective, in situ growth of nanotubes compatible with the requirements of microelectronics technology. This deposition method can be exploited for carbon nanotube vias. Semiconducting singlewalled tubes can be successfully operated as carbon nanotube field effect transistors (CNTFETs). A simulation of an ideal CNTFET is presented and compared with the requirements of the ITRS Roadmap. Finally, we compare an upgraded CNTFET with the most advanced silicon MOSFETs.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
S. lijima: Helical microtubules of graphitic carbon. Nature 354, 56 (1991)
R.H. Baughman, A.A. Zakhidov, W.A. de Heer: Carbon nanotubes-the route toward applications. Science 297, 787 (2002)
P.G. Collins, P. Avouris: Nanotubes for electronics. Sci. Am. 12, 62 (2000)
J.W. Mintmire, C.T. White: Universal density of states for carbon nanotubes. Phys. Rev. Lett. 81 (12), 2506 (1998)
B.Q. Wei, R. Vajtai, P.M. Ajayan: Reliability and current carrying capacity of carbon nanotubes. Appl. Phys. Lett. 79 (8), 1172 (2001)
R. Saito, G. Dresselhaus, M.S. Dresselhaus: Physical Properties of Carbon Nanotubes ( Imperial College Press, London 1998 )
H. Dai: Carbon nanotubes: synthesis, integration, and properties. Acc. Chem. Res. 35, 1035 (2002)
W. Steinhoegl, G. Schindler, G. Steinlesberger, M. Engelhardt: Size-dependent resistivity of metallic wires in the mesoscopic range. Phys. Rev. B 66, 075414 (2002)
W. Hoenlein: New prospects for microelectronics: carbon nanotubes. Jpn. J. Appl. Phys. 41, 4370 (2002)
D.S. Duesberg, A.P. Graham, M. Liebau, R. Seidel, E. Unger, F. Kreupl, W. Hoenlein: Growth of isolated carbon nanotubes with lithographically defined diameter and location. Nano Lett. (2003), http://dx.doi.org/10.1021/n1025906c
M. Engelhardt, G. Schindler, K. Mosig, G. Steinlesberger, W. Steinhoegl, G. Gebara: Extending copper metallization technology for wiring to end-of-theroadmap feature sizes. Conference Proceedings Advanced Metallization Conference, Montreal (2001) pp. 11–17
S.J. Tans, A.R.M. Verschueren, C. Dekker: Room-temperature transistor based on a single carbon nanotube. Nature 393, 49 (1998)
A. Bachthold, P. Hadley, T. Nakanishi, C. Dekker: Logic circuits with carbon nanotube transistors. Science 294, 1317 (2001)
S.J. Wind, J. Appenzeller, R. Martel, V. Derycke, P. Avouris: Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors. Appl. Phys. Lett. 80, 3817 (2002)
V. Derycke, L. Martel, J. Appenzeller, P. Avouris: Carbon nanotube inter-and intramolecular gates. Nano Lett. 9, 453 (2001)
J. Guo, M. Lundstrom, S. Datta: Performance projections for ballistic carbon nanotube field-effect transistors. Appl. Phys. Lett. 80, 3192 (2002)
A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, H. Dai: High-K dielectrics for advanced carbon nano-tube transistors and logic gates. Nature Mater. 1, 241 (2002)
German Patent DE 0010036897 Cl (2000)
S. Rosenblatt, Y. Yaish, J. Park, J. Gore, V. Sazonova, P. McEuen: High performance electrolyte gated carbon nanotube transistors. Nano Lett. 2, 869 (2002)
T. Ghani, S. Ahmed, P. Aminzadeh, J. Bielefeld, P. Charvat, C. Chu, M. Harper, P. Jacob, C. Jan, J. Kavalieros, C. Kenyon, R. Nagisetty, P. Packan, J. Sebastian, M. Taylor, J. Tsai, S. Tyagi, S. Yang, M. Bohr: 100 nm gate length high performance/low power CMOS transistor structure. IEDM Technical Digest (1999) pp. 415–419
B. Yu, L. Chang, S. Ahmed, H. Wang, S. Bell, C. Yang, C. Tabery, C. Ho, Q. Xiang, T. King, J. Bokor, C. Hu, M. Lin, D. Kyser: FinFET scaling to 10 nm gate length. IEDM Technical Digest (2002) pp. 251–254
B. Doris, M. Ieong, T. Kanarsky, Y. Zhang, R.A. Roy, O. Dokumaci, Z. Ren, F. Jamin, L. Shi, W. Natzle, H. Huang, J. Mezzapelle, A. Mocuta, S. Womack, M. Gibelyuk, E.C. Jones, R.J. Miller, H.P. Wong, W. Haensch: Extreme scaling with ultra-thin Si channel MOSFETs. IEDM Technical Digest (2002) pp. 267 — 270
http://www.nas.nasa.gov/Groups/SciTech/nano/images/images.html
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2004 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Hoenlein, W. et al. (2004). Carbon Nanotube Applications in Microelectronics. In: Siffert, P., Krimmel, E.F. (eds) Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09897-4_23
Download citation
DOI: https://doi.org/10.1007/978-3-662-09897-4_23
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-07356-4
Online ISBN: 978-3-662-09897-4
eBook Packages: Springer Book Archive