Abstract
The most important step in the history of semiconductor devices was the discovery of the transistor effect in a semiconductor material by Bardeen and Brattain [1] and Shockley [2] at the end of the 1940s. This invention stimulated the further development of power semiconductor devices. Efforts were undertaken to realize the effects that were predicted to occur when a p-type (acceptor-doped) and an n-type (donor-doped) region were placed close together in a semiconductor material.
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Porst, A. (2004). Power Semiconductor Devices. In: Siffert, P., Krimmel, E.F. (eds) Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09897-4_15
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DOI: https://doi.org/10.1007/978-3-662-09897-4_15
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