Abstract
Unlike dopants, metal impurities are rarely used in semiconductor devices. Nevertheless, transition metals are technologically important, since their presence in silicon is difficult to avoid and their interaction with free charge carriers may influence electronic devices [1]. An illustrative example is given by copper in silicon. As few as 1012 copper atoms per cubic centimeter of silicon may lead to significant yield loss in submicron integrated circuit manufacturing [2–4]. The high electrical and thermal conductivity of copper thin films has nevertheless pushed the electronics industry to introduce copper interconnects into its products in spite of the enhanced risk of copper contamination. Only a perfect control of copper impurities in silicon technology allows the industry such a performance. Another technological issue related to transition metals appears in the silicon photovoltaic industry, where cost reductions are pursued by using low-quality silicon with large amounts of metal impurities [5, 6]. Defect reactions occurring during device processing determine the final energy conversion efficiency. Understanding the reaction paths of the dominant impurities, their electrical activity in various states and their mutual interaction has helped in optimizing the performance of photovoltaic devices.
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Heiser, T. (2004). Transition Metal Impurities in Silicon. In: Siffert, P., Krimmel, E.F. (eds) Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09897-4_13
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