Abstract
For the construction of high-power devices such as the high-power thyristors that are commonly used for the control of motor drives for engines and rolling mills and for high-power DC transmissions, large-sized silicon crystals having an extremely tight phosphorus background doping corresponding to about 40 Ω cm or higher are required. The exact level of the phosphorus concentration and its homogeneous distribution are decisively responsible for the electrical quality of the thyristor: the breakdown behaviour and blocking voltage depend upon the maximum of the doping concentration, while the minimum of the doping concentration is responsible for the quality of the hightemperature behaviour of the device. Optimal properties can be expected if the distribution of the dopant is exactly homogeneous and no difference between the maximum and the minimum of the dopant concentration exists.
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Schnöller, M. (2004). Neutron Transmutation Doping (NTD) of Silicon. In: Siffert, P., Krimmel, E.F. (eds) Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09897-4_12
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DOI: https://doi.org/10.1007/978-3-662-09897-4_12
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