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Defects, Diffusion, Ion Implantation, Recrystallization, and Dielectrics

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Silicon

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Abstract

Ideally pure single-crystal silicon shows an intrinsic electrical conductivity, which is low at room temperature and rises with increasing temperature. To produce devices, well-defined parts of the silicon specimen, usually in the form of a wafer, must exhibit a well-defined surplus of either negative (electrons) or positive (holes) carriers, leading to n-type conductivity or p-type conductivity, respectively. n-type conductivity is obtained by doping with donors such as P, As, and Sb, and p-type conductivity is obtained with acceptors such as B, Al, Ga, and In. Donor or acceptor atoms must be on substitutional sites in the single-crystal silicon lattice to be electrically active, i.e. to form levels close to the conduction band or close to the valence band, respectively. The particular cases of N in Si and C are discussed in the context of ion implantation.

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Authors
  1. E. F. Krimmel
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Editors and Affiliations

  1. General Secretary European Materials Research Society, 23 rue du Loess, 67037, Strasbourg Cedex 2, France

    P. Siffert

  2. Siemens Corporate Research Laboratories, München, Germany

    E. F. Krimmel

  3. J.W. Goethe University, Frankfurt/M, Germany

    E. F. Krimmel

  4. European Materials Research Society, Strasbourg, France

    E. F. Krimmel

  5. Mendelssohnstr. 7, 82049, Pullach/Isartal, Germany

    E. F. Krimmel

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Krimmel, E.F. (2004). Defects, Diffusion, Ion Implantation, Recrystallization, and Dielectrics. In: Siffert, P., Krimmel, E.F. (eds) Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09897-4_11

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  • DOI: https://doi.org/10.1007/978-3-662-09897-4_11

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-07356-4

  • Online ISBN: 978-3-662-09897-4

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