Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibrations

  • J. Dong
  • A.-B. Chen
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 73)


As a result of intensive research in the past decade, SiC has matured as a semiconductor for electronic-device applications. The knowledge of the fundamental materials properties for SiC is also as mature as that for other semiconductors. This is particularly true for the three most common polytypes 3C, 4H, and 6H. This chapter attempts to summarize the current status of the crystal structure, bonding energy, band structure, and lattice vibrations for the four polytypes 3C, 2H, 4H, and 6H of SiC. We evaluate these properties with our theoretical tools and make an effort to compare different polytypes. We then conclude by separating the well-established results from those that remain uncertain. Such an emphasis not only provides an updated source for these fundamental properties but may also encourage further refinement of these results.


Local Density Approximation Phonon Dispersion Conduction Band Minimum Local Density Approximation Calculation Hexagonal Polytype 
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  • J. Dong
  • A.-B. Chen

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