Abstract
The valence bands of germanium, silicon and the III–V compounds have an extremum at k = 0 and are degenerate there. The constant-energy surfaces for this case are warped spheres which have already been discussed in Sect. 2.4 (Figs. 2.28a–2.28c). In the zincblende lattice typical for III–V compounds, there is no center of inversion, in contrast to the diamond lattice.
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Reference
L. Pincherle, in Proc. Int’l School of Physics XXII, ed. by R.A. Smith ( Academic, New York 1963 ) p. 43
J.G. Mavroides, in Optical Properties of Solids, ed. by F. Abeles ( NorthHolland, Amsterdam 1972 ) p. 394
G. Dresselhaus, A.F. Kip, C. Kittel, Phys. Rev. 98, 368 (1955)
B.W. Levinger, D.R. Frankl, J. Phys. Chem. Solids 20, 281 (1961)
G.E. Pikus, G.L. Bir, Fiz. Tverd. Tela 1, 1642 (1959) [Engl. transl., Soy. Phys. - Solid State 1, 1502 (1959)]
K. Bulthuis, Philips Res. Rep. 23, 25 (1968)
S.H. Koenig, in Proc. Int’l School of Physics XXII, ed. by R.A. Smith ( Academic, New York 1963 ) p. 515
B. Lax, J.G. Mavroides, Phys. Rev. 100, 1650 (1955)
J.W. McClure, Phys. Rev. 101, 1642 (1956)
J.G. Mavroides, B. Lax, Phys. Rev. 107, 1530 (1957); ibid. 108, 1648 (1957)
P. Lawaetz, Phys. Rev. 174, 867 (1968) footnote p.875
P. Lawaetz, Some Transport Properties of Holes in Germanium, Thesis, Tech. Univ. Copenhagen (1967) p. 138
A.C. Beer, Solid State Physics Vol. 4, Chap. 20b (Academic, New York 1963 ) ed. by F. Seitz, D. Turnbull
G.L. Pearson, H. Suhl, Phys. Rev. 83, 768 (1951)
G.L. Pearson, C. Herring, Physica 20, 975 (1954)
D.M. Brown, R. Bray, Phys. Rev. 127, 1593 (1962)
D.M.S. Bagguley, R.A. Stradling, Proc. Phys. Soc. London 78, 1078 (1961)
A.C. Beer, R.K. Willardson, Phys. Rev. 110, 1286 (1958)
E.O. Kane, J. Phys. Chem. Solids 1, 82 (1956)
D. Matz, J. Phys. Chem. Solids 28, 373 (1967)
M. Asche, J. von Borzeszkowski, Phys. Status Solidi 37, 433 (1970)
P. Hauge, The Microwave Magneto-Kerr Effect in Germanium and Silicon and its Applications to Studies of Carrier Relaxation Time and Effective Mass. Ph.D. Thesis, Univ. of Minnesota, USA (1967)
M. Costato, L. Reggiani, Lett. Nuovo Cimento Ser.I., 3, 239 (1970)
G. Persky, D.J. Bartelink, IBM J. Res. Dev. 13, 607 (1969)
W. Fawcett, J.G. Ruch, Appl. Phys. Lett. 15, 369 (1969)
H. Miyazawa, K. Suzuki, H. Maeda, Phys. Rev. 131, 2442 (1963)
D. Long, Phys. Rev. 107, 672 (1957)
R. Bray, D.M. Brown, Proc. Int’l Conf. Phys. Semicond, Prague 1960 (Czech. Acad. Sciences, Prague 1960 ) p. 82
A.C. Prior, Proc. Phys. Soc. London 76, 465 (1960)
W.E.K. Gibbs, J. Appl.Phys. 33, 3369 (1962)
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Seeger, K. (2004). Carrier Transport in the Warped-Sphere Model. In: Semiconductor Physics. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09855-4_8
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