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Charge Transport and Scattering Processes in the Many-Valley Model

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Semiconductor Physics

Part of the book series: Advanced Texts in Physics ((ADTP))

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Abstract

In Sect. 2.4, Figs. 2.26, 27, we saw that the conduction bands of silicon and germanium have constant energy surfaces near the band edge which are either 8 half-ellipsoids or 6 ellipsoids of revolution; these correspond to 4 and 6 energy valleys, respectively. In these and many other semiconductors the many-valley model of the energy bands has proved to be a fruitful concept for a description of the observed anisotropy of electrical and optical phenomena. Cyclotron resonance (Sect. 11.11) provides a direct experimental determination of the effective masses in each valley for any crystallographic direction.

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  1. Am Modenapark 13/5, 1030, Vienna, Austria

    Professor Karlheinz Seeger

  2. Institut für Materialphysik der Universität, Boltzmanngasse 5, 1090, Vienna, Austria

    Professor Karlheinz Seeger

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© 2004 Springer-Verlag Berlin Heidelberg

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Seeger, K. (2004). Charge Transport and Scattering Processes in the Many-Valley Model. In: Semiconductor Physics. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09855-4_7

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  • DOI: https://doi.org/10.1007/978-3-662-09855-4_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-06023-6

  • Online ISBN: 978-3-662-09855-4

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