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Carrier Diffusion Processes

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Semiconductor Physics

Part of the book series: Advanced Texts in Physics ((ADTP))

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Abstract

The discussion of (4.10.8–11) has shown that a temperature gradient in a conductor yields a concentration gradient ▽n with the effect of a diffusion current j = −e D n ▽ r n, where D n is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of injected carriers in local variations in the type of doping, which is typical for p-n junctions and bipolar transistors.

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Authors and Affiliations

  1. Am Modenapark 13/5, 1030, Vienna, Austria

    Professor Karlheinz Seeger

  2. Institut für Materialphysik der Universität, Boltzmanngasse 5, 1090, Vienna, Austria

    Professor Karlheinz Seeger

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  1. Professor Karlheinz Seeger
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© 2004 Springer-Verlag Berlin Heidelberg

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Seeger, K. (2004). Carrier Diffusion Processes. In: Semiconductor Physics. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09855-4_5

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  • DOI: https://doi.org/10.1007/978-3-662-09855-4_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-06023-6

  • Online ISBN: 978-3-662-09855-4

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