Abstract
Electroluminescent devices emit incoherent visible or infrared light with typical line widths of about 10 nm while the coherent radiation emitted by the semiconductor laser may have a line width as low as 10−2 nm. These devices, together with photovoltaic diodes and solar cells (Sects. 5.8, 9, Chap. 12), are called optoelectronic devices. While the former convert electrical energy into optical radiation, the latter do the inverse process. In this chapter we will consider light-emitting diodes (LED), a light-emitting transistor (LET), and diode lasers [13.1].
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Reference
T.S. Moss, G.J. Burrell, B. Ellis, Semiconductor Optoelectronics ( Butterworth, London 1973 )
J.I. Pankove (ed.), Electroluminescence, Topics Appl. Phys., Vol. 17( Springer, Berlin, Heidelberg 1977 )
G. Destriau, J. Chim. Phys. 33, 587 (1936)
L. Canham, Appl. Phys. Lett. 57, 1046 (1990)
P.J. Dean, D.C. Herbert, in Excitons, ed. by K. Cho, Topics Curr. Phys., Vol. 14(Springer, Berlin, Heidelberg 1979 ) Sect. 3.3.3
W.N. Carr, IEEE Trans. ED-12, 531 (1965)
N. Holonyak Jr., F. Bevaqua, Appl. Phys. Lett. 1, 82 (1962)
M. Gershenzon, Bell. Syst. Tech. J. 45, 1599 (1966)
C.H. Henry, P.J. Dean, J.D. Cuthbert, Phys. Rev. 166, 754 (1968)
D.L. MacAdam, Color Measurement, 2nd edn., Springer Ser. Opt. Sci., Vol. 27( Springer, Berlin, Heidelberg (1985)
R.W. Brander, Mater. Res. Bull. 4, 187 (1969)
A.A. Bergh, P.J. Dean, Proc. IEEE 60, 156 (1972)
M. Feng, N. Holonyak Jr., W. Hafez, Appl. Phys. Lett. 84, 151 (2004)
W. Hafez, J.W. Lai, M. Feng, Electron Lett. 39, 1475 (2003)
W. Hafez, J.W. Lai, M. Feng, IEEE Electron Device Lett. 24, 436 (2003)
J. Bardeen in “Collected Works of John Von Neumann” Vol.5, p. 420, Pergamon, New York 1963
H.C. Casey Jr., M.B. Panish, Heterostructure Lasers,Part A, Academic Press, New York, 1978
M.G.A. Bernard, G. Duraffourg, Phys. Stat Sol. 1, 699 (1961)
R.L. Anderson, IBM J. Res. Dev. 4, 283 (1960)
J.J. Hsieh, Appl. Phys. Lett. 28, 283 (1976)
C.J. Nuese, G. Olsen, Appl. Phys. Lett. 26, 528 (1975)
R.E. Nahory, M.A. Pollak, E.D. Beebe, J.C. De Winter, R.W. Dixon, Appl. Phys. Lett. 28, 19 (1976)
H. Kressel, in Handbook on Semiconductors, Vol. 4, ed. by C. Hilsum ( North-Holland, Amsterdam 1981 ) p. 617
A.V. Nurmikko, R.L. Gunshor, In Proc. 22nd Int’l Conf. Phys. Semicond., Vancouver (1994) p.27, ed. by D.J. Lockwood ( World Scientific, Singapore 1995 )
D.J. Olego, Europhys. News 26, 112 (1995)
H. Amano, M. Kito, K. Hiramatsu, I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1998)
S. Nakamura, G. Fasol, The Blue Laser Diode, GaN based Light Emitters and Lasers (Springer-Verlag, Berlin, Heidelberg 1997 )
H. Morkoç, S. Srite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burus, J. Appl. Phys. 76, 1363 (1994)
S. Nakamura, Y. Harada, M. Seno, Appl. Phys. Lett. 58, 2021 (1991)
I. Hayashi, M.B. Panish, J. Appl. Phys. 41, 150 (1950)
T. Mukai, K. Takegawa, S. Nakamura, Jpn. J. Appl. Phys. 37, L 839 (1998)
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho, Jpn. J. Appl. Phys. 37, L 627 (1998)
T. Mukai, H. Narimatsu, S. Nakamura, Jpn. J. Appl. Phys. 37, L 479 (1998)
S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Mukai, Jpn. J. Appl. Phys. 34, L 1332 (1995)
J. Baur, P. Schlotter, J. Schneider,Festkörperprobleme/ Advances in Solid State Physics, Vol. 37, ed. by R. Helbig ( Vieweg, Wiesbaden 1997 ) p. 67
T.C. Harman, in The Physics of Semimetals and Narrow-Gap Semiconduc- tors, ed. by D.L. Carter, R.T. Bate ( Pergamon, Oxford 1971 ) p. 363
J.F. Faist, F. Capasso, D.L. Sivco, C. Sirtori, A.L. Hutchinson, A.Y. Cho, Science 264, 553 (1994)
R. Köhler, A. Tredicucci, F. Beltram, H.E. Beere, E.H. Linfield, A.G. Davies, D.A. Ritchi, R.C. Iotti, F. Rossi, Nature 417, 157 (2002)
C. Gmachl et al., Rep.Prog.Phys. 64, 1533 (2001)
C. Gmachl et al., IEEE J. Quantum Electron. 38, 569 (2002)
C. Gmachl, R. Colombelli, F. Capasso, D.L. Sivco, A.Y. Cho, Proc. Int’l School of Physics, Course CL, IOS Press Amsterdam (2003)
D.L. Derry, A. Yariv, K.Y. Lau, N. Bar-Chaim, K. Lee, J. Rosenberg, Appl. Phys. Lett. 50, 1773 (1987)
C.K.N. Patel, E.D. Shaw, Phys. Rev. Lett. 24, 451 (1970)
C. Sirtori, A. Tredicucci, F. Capasso, J. Faist, D.L. Sivco, A.L. Hutchinson, A.Y. Cho, Opt. Lett. 23 463 (1998)
C.K.N. Patel, E.D. Shaw, R.J. Kerl, Phys. Rev. Lett. 25 8 (1970)
Y. Yafet, Phys. Rev. 152 858 (1966)
P.A. Wolff, Phys. Rev. Lett. 16 225 (1966); IEEE J. QE. 2 659 (1966)
F. Agullò - Rueda, E.E. Mendez, J.M. Hong, Phys. Rev. B 40, 1357 (1989)
E.E. Mendez, G. Bastard, Physics Today, June 1993, p. 34
C. Waschke, H.G. Roskos, R. Schwedler, K. Leo, H. Kurz, Phys. Rev. Lett. 70, 3319 (1993)
H.G. Roskos, C. Nuss, J. Shah, K. Leo, D.A.B. Miller, A.M. Fox, S. Schmitt-Rink, K. Köhler, Phys. Rev. Lett. 68, 2216 (1992)
F. Beltram, F. Capasso, D.L. Sivco, A.L. Hutchinson, S.N.G. Chu, A.Y. Cho, Phys. Rev. Lett. 64, 3167 (1990)
G. Bastard, A. Brum, R. Ferreira, Solid State Physics, Vol. 44, ed. by H. Ehrenreich, D. Turnbull ( Academic, New York 1991 ) p. 229
T. Yajima, Y. Taira, J. Phys. Soc. Jpn. 47, 1620 (1979)
G. Valusis, V.G. Lyssenko, D. Klatt, F. Löser, K.H. Pantke, K. Leo, K. Köhler, 23rd Int’l Conf. Phys. Semicond. Vol. 3, ed. by M. Scheffler, R. Zimmermann ( World Scientific, Singapore 1996 ) p. 1783
W. Rehm, H. Künzel, G.H. Döhler, K. Ploog, P. Ruden, Physica 117B,and 118B, 732 (1983)
B. Abeles, T. Tiedje, Phys. Rev. Lett. 51, 2003 (1983)
J.D. Joannopoulos, G. Lucovsky (eds.), The Physics of Hydrogenated Amorphous Silicon I and II, Topics Appl. Phys., Vols. 55 and 56 ( Springer, Berlin, Heidelberg 1984 )
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2004 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Seeger, K. (2004). Light Generation by Semiconductors. In: Semiconductor Physics. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09855-4_13
Download citation
DOI: https://doi.org/10.1007/978-3-662-09855-4_13
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-06023-6
Online ISBN: 978-3-662-09855-4
eBook Packages: Springer Book Archive