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Thermische Oxidation

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Prozeßtechnologie

Part of the book series: Mikroelektronik ((MIKROELEKTRONIK))

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Zusammenfassung

Ein wesentlicher Vorteil des Siliziums gegenüber anderen Halbleitermaterialien besteht darin, daß sich durch die thermische Oxidation auf einfache Weise eine stabile Oxidschicht herstellen läßt. Diese Schicht übernimmt während der Herstellung der integrierten Schaltungen die Funktion der Maskierung bei der lokalen Modifikation des Siliziums (Diffusionsbarriere) sowie die elektrische Isolation zwischen den Bauelementstrukturen.

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Authors
  1. P. Seegebrecht
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  2. N. Bündgens
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© 1991 Springer-Verlag Berlin Heidelberg

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Seegebrecht, P., Bündgens, N. (1991). Thermische Oxidation. In: Prozeßtechnologie. Mikroelektronik. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09540-9_6

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  • DOI: https://doi.org/10.1007/978-3-662-09540-9_6

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-17670-1

  • Online ISBN: 978-3-662-09540-9

  • eBook Packages: Springer Book Archive

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