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High-K Dielectrics: The Example of Pr2O3

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Predictive Simulation of Semiconductor Processing

Part of the book series: Springer Series in MATERIALS SCIENCE ((SSMATERIALS,volume 72))

Abstract

Praseodymium oxide is a rare earth metal oxide that has not been used for microelectronic applications so far. It has a dielectric constant in the range of 30–40 and thermodynamic estimates indicate its stability against critical reactions with silicon. We present current theoretical understanding of the grhwto of epitaxial praseodymium oxide films on a silicon substrate. In particular, we show that crystalline praseodymium oxide films can be grown on Si(001). Such crystalline films have outstanding dielectric properties, with a dielectric constant of around 30 independently of substrate doping, a very low leakage current density of 5·10−9 A/cm2 at V g = ±1.0V at t eff = 1.4 nm, and good reliability. We report on the structure and stability of thin praseodymium oxide layers on Si(001). Our results were obtained by combined Scanning Tunneling Microscopy (STM), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES), and interpreted with the assistance of ab initio pseudopotential calculations. In particular, we present experimental evidence and a theoretical explanation for the formation of an oxygen-rich interfacial layer between the oxide and silicon.

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Authors
  1. H. J. Osten
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  2. J. Dąbrowski
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  3. H.-J. Müssig
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  4. A. Fissel
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  5. V. Zavodinsky
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Editor information

Editors and Affiliations

  1. IHP, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany

    Jarek Dabrowski

  2. Department of Materials Science, University of California, 374 Hearst Mining Bldg., 94720-1760, Berkeley, CA, USA

    Eicke R. Weber

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© 2004 Springer-Verlag Berlin Heidelberg

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Osten, H.J., Dąbrowski, J., Müssig, HJ., Fissel, A., Zavodinsky, V. (2004). High-K Dielectrics: The Example of Pr2O3 . In: Dabrowski, J., Weber, E.R. (eds) Predictive Simulation of Semiconductor Processing. Springer Series in MATERIALS SCIENCE, vol 72. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09432-7_7

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  • DOI: https://doi.org/10.1007/978-3-662-09432-7_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-05804-2

  • Online ISBN: 978-3-662-09432-7

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