Abstract
The article addresses the topical issue of donors and their luminescence characterization in wide-gap semiconductors. In epitaxial diamond layers grown by chemical vapor deposition on synthetic diamond substrates there is now — after many years of intense research into this issue — firm evidence for phosphorus being a substitutional donor. Conclusive data include Hall measurements, photocurrent and infrared absorption spectroscopies, donor-acceptor pair (DAP) luminescence, and — very recently — bound exciton luminescence showing all optical signatures expected for such excitonic transitions. We will particularly discuss these novel phosphorus-related exciton luminescence spectra. ZnO and GaN are naturally n-type. High-quality samples show in the near-bandgap region multiple, narrow bound exciton recombination transitions due to a variety of different yet not fully identified donors. These spectra are replicated at lower energies, with the excitation of the donors in the luminescence final states, often called bound exciton two-electron satellites. The correlation of these two types of spectra for individual donors is made manifest by studying different samples and by Zeeman spectra in magnetic field as high as 28 Tesla. Once such correlations have been established for individual donors one can use the information contained in the donor final state excitations to determine their ionization energies alone from the photoluminescence spectra.
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Sauer, R., Thonke, K. (2004). Donor-Related Exciton Luminescence in Wide-Bandgap Semiconductors: Diamond, Zinc Oxide, and Gallium Nitride. In: Kalt, H., Hetterich, M. (eds) Optics of Semiconductors and Their Nanostructures. Springer Series in Solid-State Sciences, vol 146. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09115-9_4
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