Abstract
The determination of microscopic optical properties of an ensemble of localized excitons in a solid-state environment using speckle analysis of their resonant light scattering is reviewed. Time-resolved and spectrally resolved variants of the speckle analysis technique are discussed, and the properties of localized excitons in disordered semiconductor quantum wells are investigated. The results cover spin relaxation, radiative coupling, acoustic phonon interaction, and exciton level statistics. The theoretical description is based on density-matrix theory in terms of the disorder eigenstates for the exciton center-of-mass motion. Kinetic equations are derived and solved numerically for time-resolved as well as frequency-resolved spectra with speckles. A key role is played by intensity-intensity correlation functions which give the average speckle shape and allow to extract information on the underlying microscopic properties.
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Langbein, W., Kocherscheidt, G., Zimmermann, R. (2004). Probing Localized Excitons by Speckle Analysis of Resonant Light Scattering. In: Kalt, H., Hetterich, M. (eds) Optics of Semiconductors and Their Nanostructures. Springer Series in Solid-State Sciences, vol 146. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09115-9_3
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DOI: https://doi.org/10.1007/978-3-662-09115-9_3
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