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Nanostructures pp 235-271 | Cite as

Transport

  • Christophe Delerue
  • Michel Lannoo
Part of the NanoScience and Technology book series (NANO)

Abstract

The research on transport properties of nanoelectronic devices has become a worldwide effort due to the possibility to fabricate structures at the nanometer scale. Metal-Oxyde-Semiconductor transistors with channel lengths as small as 10 nm are now being actively studied both theoretically and experimentally [464]. Remarkable experiments have been performed to measure the current I through single-quantum systems, such as molecules [465–472] or semiconductor quantum dots [249, 473–478]. In these experiments, the molecules or the quantum dots are connected to metallic electrodes under bias φ using scanning tunneling microscopy tips [249, 465, 468, 476], nanometersize electrodes [469, 477] or break junctions [470, 472]. Measurements display features arising from the quantum states of the system and from Coulombic effects (see Chap. 4). Peaks in the conductance dI/dφ characteristics are attributed to resonant tunneling through discrete levels. Also, semiconductor nanocrystals can be assembled to form artificial materials with interesting transport properties [479–481].

Keywords

Local Density Approximation Coherent Potential Approximation Fermi Golden Rule Left Electrode Left Lead 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2004

Authors and Affiliations

  • Christophe Delerue
    • 1
  • Michel Lannoo
    • 2
  1. 1.Département ISENIEMNLilleFrance
  2. 2.CNRSParis, Cedex 16France

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