Nanostructures pp 235-271 | Cite as


  • Christophe Delerue
  • Michel Lannoo
Part of the NanoScience and Technology book series (NANO)


The research on transport properties of nanoelectronic devices has become a worldwide effort due to the possibility to fabricate structures at the nanometer scale. Metal-Oxyde-Semiconductor transistors with channel lengths as small as 10 nm are now being actively studied both theoretically and experimentally [464]. Remarkable experiments have been performed to measure the current I through single-quantum systems, such as molecules [465–472] or semiconductor quantum dots [249, 473–478]. In these experiments, the molecules or the quantum dots are connected to metallic electrodes under bias φ using scanning tunneling microscopy tips [249, 465, 468, 476], nanometersize electrodes [469, 477] or break junctions [470, 472]. Measurements display features arising from the quantum states of the system and from Coulombic effects (see Chap. 4). Peaks in the conductance dI/dφ characteristics are attributed to resonant tunneling through discrete levels. Also, semiconductor nanocrystals can be assembled to form artificial materials with interesting transport properties [479–481].


Local Density Approximation Coherent Potential Approximation Fermi Golden Rule Left Electrode Left Lead 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2004

Authors and Affiliations

  • Christophe Delerue
    • 1
  • Michel Lannoo
    • 2
  1. 1.Département ISENIEMNLilleFrance
  2. 2.CNRSParis, Cedex 16France

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