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Modeling of Reaction and Transport in CVD Process: Predictions of Growth and Uniformity of Tin Oxide Films

  • Theodora C. Xenidou
  • Andreas G. Boudouvis
  • Nicolas C. Markatos
Chapter

Abstract

The design of a chemical vapor deposition process is performed by combining a detailed computational fluid dynamics (CFD) model and a Langmuir-Hinshelwood type kinetic scheme. This methodology is implemented in a cold-wall reactor, where tin oxide thin films are grown under atmospheric pressure conditions. A set of available experimental data is used to estimate the parameters required by the kinetic model. The coupled CFD/kinetic model is then used for a systematic analysis of the reactor performance. Simulation results are suggestive of modifications in the operating parameters that could enhance the uniformity of the layer thickness.

Keywords

Computational Fluid Dynamic Model Chemical Vapor Deposition Process Inlet Flow Rate Chemical Vapor Deposi Inlet Hole 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Nomenclature

g

gravity acceleration

j

diffusive mass flux

u

velocity vector

Cs

concentration at the wafer surface

Cp

specific heat

DT

thermal diffusion coefficient

Deff

effective diffusion coefficient

D

binary diffusion coefficient

Fd

flow rate of the diluent gas

Fo

flow rate of O2

G

growth rate

H

enthalpy of formation

I

unity tensor

Ka

adsorption rate coefficient

Kd

desorption rate coefficient

M

molecular weight

N

number of gas species

P

pressure

Rd

deposition rate

T

temperature

λ

thermal conductivity

μ

viscosity

ρ

density

ω

mass fraction

i

with respect to ith gas species

(g)

gas phase species

(a)

adsorbed species

(s)

solid species

max

maximum value

min

minimum value

ave

average value

T

due to temperature gradients

C

due to concentration gradients

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Copyright information

© Springer-Verlag Berlin Heidelberg 2004

Authors and Affiliations

  • Theodora C. Xenidou
    • 1
  • Andreas G. Boudouvis
    • 1
  • Nicolas C. Markatos
    • 1
  1. 1.School of Chemical EngineeringNational Technical University of AthensAthensGreece

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