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Measurement Strategies

  • Otwin Breitenstein
  • Martin Langenkamp
Chapter
  • 175 Downloads
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 10)

Abstract

In the following sections some practical aspects of using lock-in thermography in the functional diagnostics of electronic components will be discussed and illustrated by measurement examples of a typical, thermally thin sample (solar cell) and a thermally thick one (integrated circuit). All these discussions are based on the theoretical findings presented in Chap. 4. Section 5.1 discusses the question which of the images available from a lock-in thermography experiment (0° image, −90° image, amplitude image, or phase image) is most appropriate to display certain details of different heat source distributions. In Sect. 5.2, the influence of the lock-in frequency on the obtained signal amplitude and lateral resolution of the thermograms will be discussed and demonstrated for different heat source geometries. In Sect. 5.3, the influence of a spatially varying IR emissivity will be discussed (emissivity contrast), and different ways to overcome this influence will be introduced and demonstrated. Here, a novel way to display lock-in thermography results will be presented, providing a perfect correction of the emissivity contrast and being advantageous particulary for microscopic investigations of ICs. Section 5.4 describes the technique of measuring local I-V characteristics thermally (LIVT). In addition, it will be shown there how a non-destructive mapping of the so-called n-factor of exponential I-V characteristics is possible. Finally, in Sect. 5.5 a simple technique will be introduced to distinguish Joule type heating from Peltier effects in lock-in thermography experiments on resistive samples.

Keywords

Solar Cell Heat Source Phase Image Topography Image Thick Sample 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2003

Authors and Affiliations

  • Otwin Breitenstein
    • 1
  • Martin Langenkamp
    • 1
  1. 1.Max-Planck-Institut für MikrostrukturphysikHalleGermany

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