Abstract
Most of the current investigations of the dynamics of semiconductor injection lasers allow only for three characteristic time constants: the spontaneous recombination time Of electrons and holes t(sp) amounting to ~1000 psec, photon lifetime t(ph) and cavity round-trip transit time t(c), both amounting to ~10 psec. This approach is used, for instance, in [1] and it implies that intraband relaxation processes are instanteneous. It is then possible to use quasiequilibrium distribution functions of carriers with constant temperature T and to assume that the gain profile of the semiconductor is quasihomogeneously broadened.
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L.A. Rivlin, A. T. Semenov, S.D. Yakubovich Dynamics and Emission Spectra of Semiconductor Lasers. Ed. by L.A. Rivlin. J. Sov. Laser Res. v.7, #2, 1986. Plenum Publ. Co. N. Y.
L. A. Rivlin - Sov. J. Quant. Electr. v.15(4), 1985. Publ. by AIP.
L. A. Rivlin - Sov. J. Quant. Electr. v.19(10), 1989. Publ. by AIP.
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© 1994 Springer-Verlag Berlin Heidelberg
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Batovrin, V.K., Evtikhiev, N.N., Rivlin, L.A. (1994). Nonisothermal Electron Behaviour in Injection Laser. In: Waidelich, W. (eds) Laser in der Technik / Laser in Engineering. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-08251-5_25
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DOI: https://doi.org/10.1007/978-3-662-08251-5_25
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-57444-6
Online ISBN: 978-3-662-08251-5
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