Abstract
Electrochemical etching of semiconductors, beside technical applications, provides an interesting experimental setup for self-organized structure formation capable of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed to occur inhomogeneously in time and space as a Current Burst (CB); properties and interactions between CB’s are described by a number of material- and chemistry-dependent ingredients, like passivation and aging of surfaces in different crystallographic orientations, giving a qualitative understanding of resulting pore morphologies.
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Claussen, J.C., Carstensen, J., Christophersen, M., Langa, S., Föll, H. (2003). Self-Organized Formation of Fractal and Regular Pores in Semiconductors. In: Emmerich, H., Nestler, B., Schreckenberg, M. (eds) Interface and Transport Dynamics. Lecture Notes in Computational Science and Engineering, vol 32. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07969-0_7
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DOI: https://doi.org/10.1007/978-3-662-07969-0_7
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