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GaAs-Planartechnologie

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GaAs-Feldeffekttransistoren

Part of the book series: Halbleiter-Elektronik ((HALBLEITER,volume 16))

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Zusammenfassung

Die Technologie des GaAs-MESFET umfaßt eine Folge von komplexen Einzelprozessen, die reproduzierbar beherrscht werden miissen. Auf dieser Grundlage lassen sich schließlich Bauelemente herstellen, welche die aus den physikalischen Gegebenheiten des GaAs zu erwartenden guten Hochfrequenzei-genschaften aufweisen.

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Authors and Affiliations

  1. Zentrale Forschung und Entwicklung, Siemens AG, München, Deutschland

    Dr. phil. Walter Kellner (Fachgruppenleiter) & Dipl.-Phys. Hermann Kniepkamp (Fachabteilungsleiter)

Authors
  1. Dr. phil. Walter Kellner
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  2. Dipl.-Phys. Hermann Kniepkamp
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© 1985 Springer-Verlag Berlin Heidelberg

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Kellner, W., Kniepkamp, H. (1985). GaAs-Planartechnologie. In: GaAs-Feldeffekttransistoren. Halbleiter-Elektronik, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07363-6_5

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  • DOI: https://doi.org/10.1007/978-3-662-07363-6_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-13763-4

  • Online ISBN: 978-3-662-07363-6

  • eBook Packages: Springer Book Archive

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