Zusammenfassung
Ein Feldeffekttransistor ist ein Halbleiterbauelement mit drei Anschlüssen — Source, Drain und Gate — , bei dem der Stromfluß zwischen Source und Drain durch ein zum Stromfluß transversales elektrisches Feld, das von der Gateelektrode ausgeht, gesteuert wird. Da am Stromtransport nur bewegliche Ladungsträger eines Typs (Elektronen oder Löcher) beteiligt sind, spricht man hier auch von unipolaren Transistoren. In bipolaren Transistoren dagegen nehmen sowohl Elektronen als auch Löcher am Stromtransport teil. Band 6 dieser Buchreihe behandelt diese Transistoren.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
Literaturverzeichnis
Literatur zu 2.1 und 2.2
Liechti, C. A.: Microwave field-effect transistors 1976. IEEE Trans. MTT-24 (1976) 279–300.
Oakes, J. G.; Wickstrom, R. A.; Tremere, D. A.; Heng, T. M. S.: A power silicon MOS transistor. IEEE Trans. MTT-24 (1976) 305–311.
Sigg, H. J.; Vendelin, G. D.; Cauge, T. P.; Kocsis, I.: D-MOS transistor for microwave application. IEEE Trans. ED-19 (1972) 45–53.
Ronen, R.; Strauss, L.: The silicon-on-sapphive MOS tetrode, some small signal features LF to UHF. IEEE Trans. ED-21 (1974) 100–109.
Teszner, S.: Gridistor development for the microwave power region. IEEE Trans. ED-19 (1972) 355–364.
Nishizawa, J.-I.; Terasaki, T.; Shibata, J.: Field-effect transistor versus analog transistor (static induction transistor). IEEE Trans. ED-22 (1975) 186–197.
Aiga, M.; Higaki, Y.; Kato, M.; Kajiwara, Y.; Yukimoto, Y.; Shirahata, K.: 1 GHz 100 W internally matched static induction transistor. Proc. 9th Europ. Microwave Conf. Brighton, Sept. 1979, 561–565.
Shockley, W.: Transistor electronics: Imperfections, unipolar and analog transistors. Proc. IRE 40 (1952) 1289–1313.
Bozler, C. O.; Alley, G. D.: Fabrication and numerical simulation of the permeable base transistor. IEEE Trans. ED-27 (1980) 1128–1141.
Vergnolle, C.; Funck, R.; Laviron, M.: An adequate structure for power microwave FETs. Int. Solid State Circuits Conf. Dig. Tech. Pap. 1975, pp. 66/67.
Umebachi, S.; Asahi, K.; Inone, M.; Kano, G.: A new heterojunction gate GaAs FET. IEEE Trans. ED-22 (1975) 613–614.
Baechtold, W.; Daetwyler, K.; Forster, T.; Mohr, T. O.; Walter, W.; Wolf, P.: Si and GaAs 0,5 µm-gate Schottkybarrier field-effect transistors. Electron. Lett. 9 (1973) 232–234.
Darley, H. M.; Houston, T. W.; Taylor, G. W.: Fabrication and performance of submicron silicon MESFET. Int. Electron. Dev. Meet. Tech. Dig. (1978) 62–65.
Barrera, J.; Archer, R.: InP Schottky-gate field-effect transistors. IEEE Trans. ED-22 (1975) 1023–1030.
Decker, D.; Fairman, R.; Nishimoto, C.: Microwave InGaAs Schottky-barrier gate field-effect transistors. Proc. 5th Biennial Cornell Electr. Eng. Conf. Cornell Univ. Ithaca/N.Y., Aug. 1975, pp. 305–314.
Ishibashi, T.: InP MESFET with In0 53 Ga0.47 As/InP heterostructure contacts. Electron. Lett. 17 (1981) 215–216.
Gleason, K. R.; Dietrich, H. B.; Henry, R. L.; Cohen, E. D.; Barle, M. L.: Ion-implanted n-channel InP metal semiconductor field-effect transistor. Appl. Phys. Lett. 32 (1978) 578–581.
Morkoc, H.; Bandy, S. G.; Sankaran, R.; Antypas, G. N.; Bell, R. L.: A study of high-speed normally off and normally on Al0.5 Ga0.5 As heterojunction gate GaAs FETs (HJFET). IEEE Trans. ED-25 (1978) 619–627.
Mimura, T.; Hiyamizu, S.; Joshin, K.; Hikosaka, K.: Enhancement mode high electron mobility transistors for logic applications. Jpn. J. Appl. Phys. 20 (1981) L317–319.
Literatur zu 2.3
Cowley, A. M.; Sze, S. M.: Surface states and barrier height of metal semiconductor systems. J. Appl. Phys. 36 (1952) 3212–3220.
Sze, S. M.; Crowell, C. R.; Kahng, D.: Photoelectric determination of the image force dielectric constant for hot electrons in Schottky barriers. J. Appl. Phys. 35 (1964) 2534–2536.
Mead, C. A.; Spitzer, W. G.: Fermi level position at metal-semiconductor interfaces. Phys. Rev. 134, 3A (1964) A713–716.
Goodman, A. M.: Evaporated metallic contacts to conducting cadmium sulfide single crystals. J. Appl. Phys. 35 (1964) 573–580.
Shockley, W.: On the surface states associated with a periodic potential. Phys. Rev. 56 (1939) 317–323.
Mead, C. A.; Metal semiconductor surface barriers. Solid State Electron. 9 (1966) 1023–1032.
Bethe, H. A.: Theory of the boundary layer of crystal rectifiers. MIT Radiat. Lab. (1942), Rep. 43–12.
Andrews, J. M.; Lepselter, M. P.: Reverse current-voltage characteristics of metal-silicide Schottky diodes. IEEE Solid State Device Conf. Washington, D.C., Oct. 1968.
Padovani, F. A.; Stratton, R.: Field and thermionicfield emission in Schottky barriers. Solid State Electron. 9 (1966) 695–707.
Yu, A. Y. C.: The metal-semiconductor contact: an old device with a new future. IEEE Spectrum (March 1970) 83–89.
Literatur zu 2.5
Garret, C. G. B.; Brattain, W. H.: Physical theory of semiconductor surfaces. Phys. Rev. 99 (1955) 376–387.
Grove, A. S.; Snow, E. H.; Sah, C. T.: Investigation of thermally oxidised silicon surfaces using metaloxide-semiconductor structures. Solid State Electron. 8 (1965) 145–163.
Grove, A. S.; Snow, E. H.; Sah, C. T.: Simple physical model for the space-charge capacitance of metal-oxidesemiconductor structures. J. Appl. Phys. 35 (1964) 2458–2460.
Deal, B. E.; Sklar, M.; Grove, A. S.; Snow, E. H.: Characteristics of the surface-state charge (Qss) of thermally oxidised silicon. J. Electrochem. Soc. 114 (1967) 266–274.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1985 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Kellner, W., Kniepkamp, H. (1985). Grundlagen. In: GaAs-Feldeffekttransistoren. Halbleiter-Elektronik, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07363-6_2
Download citation
DOI: https://doi.org/10.1007/978-3-662-07363-6_2
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-13763-4
Online ISBN: 978-3-662-07363-6
eBook Packages: Springer Book Archive