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GaAs-Feldeffekttransistoren pp 19–65Cite as

Grundlagen

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Part of the book series: Halbleiter-Elektronik ((HALBLEITER,volume 16))

Zusammenfassung

Ein Feldeffekttransistor ist ein Halbleiterbauelement mit drei Anschlüssen — Source, Drain und Gate — , bei dem der Stromfluß zwischen Source und Drain durch ein zum Stromfluß transversales elektrisches Feld, das von der Gateelektrode ausgeht, gesteuert wird. Da am Stromtransport nur bewegliche Ladungsträger eines Typs (Elektronen oder Löcher) beteiligt sind, spricht man hier auch von unipolaren Transistoren. In bipolaren Transistoren dagegen nehmen sowohl Elektronen als auch Löcher am Stromtransport teil. Band 6 dieser Buchreihe behandelt diese Transistoren.

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Literaturverzeichnis

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Authors and Affiliations

  1. Zentrale Forschung und Entwicklung, Siemens AG, München, Deutschland

    Dr. phil. Walter Kellner (Fachgruppenleiter) & Dipl.-Phys. Hermann Kniepkamp (Fachabteilungsleiter)

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  1. Dr. phil. Walter Kellner
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  2. Dipl.-Phys. Hermann Kniepkamp
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© 1985 Springer-Verlag Berlin Heidelberg

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Kellner, W., Kniepkamp, H. (1985). Grundlagen. In: GaAs-Feldeffekttransistoren. Halbleiter-Elektronik, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07363-6_2

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  • DOI: https://doi.org/10.1007/978-3-662-07363-6_2

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-13763-4

  • Online ISBN: 978-3-662-07363-6

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