Self-Organization Phenomena at Crystal Surfaces

  • Vitaly A. Shchukin
  • Nikolai N. Ledentsov
  • Dieter Bimberg
Part of the NanoScience and Technology book series (NANO)

Abstract

The discovery of the spontaneous formation of nanometer-scale structures on crystal surfaces marked a turning point in the physics and technology of low-dimensional (1D and OD) systems. It is hard to overestimate the significance of these phenomena. Nature indeed offers us great assistance, providing small scale and high quality systems that cannot be fabricated by conventional lithography.

Keywords

Surfactant Migration Phosphorus Anisotropy Milling 

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References

  1. 3.1
    H. Haken: Synergetics. An Introduction: Nonequilibrium Phase Transitions and Self-Organization in Physics, Chemistry and Biology, 3rd edn. ( Springer, Berlin 1983 )Google Scholar
  2. 3.2
    H. Haken: Advanced Synergetics. Instability Hierarchies of Self-Organizing Systems and Devices, 2nd edn. ( Springer, Berlin 1987 )Google Scholar
  3. 3.3
    A. Madhukar: Surf. Sci. 132, 344 (1983)CrossRefGoogle Scholar
  4. 3.4
    S. Mukherjee, E. Pehlke, J. Tersoff: Phys. Rev. B 49, 1919 (1994)CrossRefGoogle Scholar
  5. 3.5
    E.D. Williams, R.J. Phaneuf, J. Wei, N.C. Bartelt, T.L. Einstein: Surf. Sci. 294, 219 (1993); Surf. Sci. 310 451 (1994)Google Scholar
  6. 3.6
    D.-J. Liu, J.D. Weeks, M.D. Johnson, E.D. Williams: Phys. Rev. B 55, 7653 (1997)CrossRefGoogle Scholar
  7. 3.7
    C. Teichert: Phys. Rep. 365, 335 (2002)CrossRefGoogle Scholar
  8. 3.8
    A. Konkar, A. Madhukar, P. Chen: Appl. Phys. Lett. 72, 220 (1998)CrossRefGoogle Scholar
  9. 3.9
    G. Jin, J.L. Liu, S.G. Thomas, Y.H. Luo, K.L. Wang, B.Y. Nguyen: Appl. Phys. Lett. 75, 2752 (1999)CrossRefGoogle Scholar
  10. 3.10
    J.H. Li, V. Holy, M. Meduna, S.C. Moss, A.G. Norman, A. Mascarenhas, J.L. Reno: Phys. Rev. B 66, 115312 (2002)Google Scholar
  11. 3.11
    G. Wulff: Z. Kristallogr. Mineral. 34, 449 (1901)Google Scholar
  12. 3.12
    C. Herring: Phys. Rev. 82, 87 (1951)CrossRefGoogle Scholar
  13. 3.
    A.A. Chernov: Uspekhi Fiz. Nauk 73 277 (1961) [Sov. Phys. Uspekhi 4 116 (1961)]Google Scholar
  14. 3.14
    W.W. Mullins: In Metal Surfaces: Structure, Energetics and Kinetics ( American Society for Metals, Metals Park 1963 ) p. 17Google Scholar
  15. 3.15
    C. Rotman, M. Wortis: Phys. Reports 103, 59 (1984)CrossRefGoogle Scholar
  16. 3.16
    D.J. Eaglesham, A.E. White, L.C. Feldman, N. Moriya, D.C. Jacobson: Phys. Rev. Lett. 70, 1643 (1993)CrossRefGoogle Scholar
  17. 3.17
    N.C. Bartelt, T.L. Einstein, C. Rottman: Phys. Rev. Lett. 66, 961 (1991)CrossRefGoogle Scholar
  18. 3.18
    J.E. Métois, J.C. Heyraud: Ultramicroscopy 31, 73 (1989)CrossRefGoogle Scholar
  19. 3.19
    H.M. van Pinxteren, J.W.M. Frenken: Europhys. Lett. 21, 43 (1993)CrossRefGoogle Scholar
  20. 3.20
    J.W. Gibbs: Collected Works, Vol. 1, Thermodynamics ( Longmans, London 1928 )Google Scholar
  21. 3.
    V.I. Marchenko, A.Ya. Parshin: Zh. Eksp. Teor. Fiz. 79 257 (1980) [Sov. Phys. JETP 52 129 (1980)]Google Scholar
  22. 3.22
    R.J. Needs: Phys. Rev. Lett. 58, 53 (1987)CrossRefGoogle Scholar
  23. 3.23
    R. Shuttleworth: Proc. Phys. Soc. London, Sect. A 63, 444 (1950)Google Scholar
  24. 3.24
    C. Herring: The Physics of Powder Metallurgy, ed. by W.E. Kingston ( McGraw-Hill, New York 1951 )Google Scholar
  25. 3.25
    V. Fiorentini, M. Methfessel, M. Scheffler: Phys. Rev. Lett. 71, 1051 (1993)CrossRefGoogle Scholar
  26. 3.26
    A. Garcia, J.E. Northrup: Phys. Rev. B 71, 17350 (1993)CrossRefGoogle Scholar
  27. 3.27
    J. Dabrowski, E. Pehlke, M. Scheffler: Phys. Rev. B 49 4790 (1994)CrossRefGoogle Scholar
  28. 3.
    A.F. Andreev, Yu.A. Kosevich: Zh. Eksp. Teor. Fiz. 81 1435 (1981) [Sov. Phys. JETP 54 761 (1981)]Google Scholar
  29. 3.29
    P. Nozières, D.E. Wolf: Z. Phys. B 70, 399 (1988); Z. Phys. B 70, 507 (1988)Google Scholar
  30. 3.30
    Yu.A. Kosevich: Progr. Surf. Sci. 55, 1 (1997)CrossRefGoogle Scholar
  31. 3.31
    L.D. Landau, E.M. Lifshitz: Theory of Elasticity ( Pergamon, New York 1959 )Google Scholar
  32. 3.32
    Y. Saito, H. Uemura, M. Uwaha: Phys. Rev. B 63, 045422 (2001)Google Scholar
  33. 3.33
    D.J. Cheng, R.F. Wallis, L. Dobrzynsky: Surf. Sci. 43, 400 (1974)CrossRefGoogle Scholar
  34. 3.
    A.F. Andreev: Pis’ma Zh. Eksp. Teor. Fiz. 32 654 (1980) [JETP Letters 32 640 (1980)]Google Scholar
  35. 3.
    A.F. Andreev: Zh. Eksp. Teor. Fiz. 80 2042 (1980) [Sov. Phys. JETP 53 1063 (1981)]Google Scholar
  36. 3.
    V.I. Marchenko: Zh. Eksp. Teor. Fiz. 81 1141 (1981) [Sov. Phys. JETP 54 605 (1981)]Google Scholar
  37. 3.37
    R. Nötzel, N.N. Ledentsov, L. Däweritz, M. Hohenstein, K. Ploog: Phys. Rev. Lett. 67, 3812 (1991)CrossRefGoogle Scholar
  38. 3.38
    R. Nötzel, N.N. Ledentsov, L. Däweritz, K. Ploog, M. Hohenstein: Phys. Rev. B 45, 3507 (1992)CrossRefGoogle Scholar
  39. 3.
    Zh.I. Alferov, A.Yu. Egorov, A.E. Zhukov, S.V. Ivanov, P.S. Kop’ev, N.N. Ledentsov, B.Ya. Mel’tser, V.M. Ustinov: Fiz. Tekh. Poluprovodn. 26 1715 (1992) [Soy. Phys. Semicond. 26 959 (1992)]Google Scholar
  40. 3.40
    V.A. Shchukin, A.I. Borovkov, N.N. Ledentsov, P.S. Kop’ev: Phys. Rev. B 51, 17767 (1995)CrossRefGoogle Scholar
  41. 3.41
    M. Kasu, N. Kobayashi: Appl. Phys. Lett. 62, 1262 (1993)CrossRefGoogle Scholar
  42. 3.42
    V.A. Shchukin, A.I. Borovkov, N.N. Ledentsov, D. Bimberg: Phys. Rev. B 51, 10104 (1995)CrossRefGoogle Scholar
  43. 3.43
    Z.V. Popovic, M B Vukmirovic, Y.S. Raptis, E. Anastassakis, R. Nötzel, K. Ploog: Phys. Rev. B 52, 5789 (1995)CrossRefGoogle Scholar
  44. 3.44
    A.J. Shields, R. Nötzel, M. Cardona, L. Däweritz, K. Ploog: Appl. Phys. Lett. 60, 2537 (1992)CrossRefGoogle Scholar
  45. 3.45
    Z.V. Popovic, E. Richter, J. Spitzer, M. Cardona, A.J. Shields, R. Nötzel, K. Ploog: Phys. Rev. B 49, 7577 (1994)CrossRefGoogle Scholar
  46. 3.46
    E. Tournié, R. Nötzel, K.H. Ploog: Phys. Rev. B 49, 11053 (1994)CrossRefGoogle Scholar
  47. 3.47
    M. Ilg, R. Nötzel, K. Ploog: Appl. Phys. Lett. 62, 1472 (1993)CrossRefGoogle Scholar
  48. 3.48
    R. Nötzel, H.-P. Schönherr, Z. Niu, L. Däweritz, K. Ploog: J. Cryst. Growth 201/202, 814 (1999)Google Scholar
  49. 3.49
    R. Nötzel, D. Essler, M. Hohenstein, K. Ploog: J. Appl. Phys. 74, 431 (1993)CrossRefGoogle Scholar
  50. 3.50
    M. Wassermeier, J. Sudijono, M.D. Johnson, K.T. Leung, B.C. Orr, L. Däweritz, K. Ploog: Phys. Rev. B 51, 14721 (1995)CrossRefGoogle Scholar
  51. 3.51
    P. Moriarty, Y.-R. Ma, A.W. Dunn, P.H. Beton, M. Henini, C. McGinley, E. McLoughlin, A.A. Cafolla, G. Hughes, S. Dowes, D. Teehan, B. Murphy: Phys. Rev. B 55, 15397 (1997)CrossRefGoogle Scholar
  52. 3.52
    L. Geelhaar, J. Marquez, K. Jacobi: Phys. Rev. B 60, 15890 (1999)CrossRefGoogle Scholar
  53. 3.53
    P. Castrillo, G. Armelles, L. Gonzalez, P.S. Dominguez, L. Colombo: Phys. Rev. B 51, 1647 (1995)CrossRefGoogle Scholar
  54. 3.54
    S.W. da Silva, Yu.A. Pusep, J.C. Galzerani, M.A. Pimenta, D.I. Lubyshev, P.P. Gonzalez Borrero, P. Basmaji: Phys. Rev. B 53, 1927 (1996)CrossRefGoogle Scholar
  55. 3.55
    D. Lüerßen, A. Dinger, H. Kalt, W. Braun, R. Nötzel, K. Ploog, J. Tümmler, J. Geurts: Phys. Rev. 57, 1631 (1998)CrossRefGoogle Scholar
  56. 3.56
    G. Armelles, P. Castrillo, P.S. Dominguez, L. Gonzälez, A. Ruiz, D.A. Contreras-Solorio, V.R. Velasco, F.García-Moliner: Phys. Rev. B 49, 14020 (1994)CrossRefGoogle Scholar
  57. 3.57
    W. Langbein, D. Lüerßen, H. Kalt, J.M. Hvam, W. Braun, K. Ploog: Phys. Rev. B 54, 10784 (1996)CrossRefGoogle Scholar
  58. 3.58
    V.A. Volodin, M.D. Efremov, V.V. Preobrazhenskii, B.P. Semyagin, V.V. Bolotov, V.A. Sachkov: Semiconductors 34, 62 (2000)CrossRefGoogle Scholar
  59. 3.59
    G. Armelles, P. Castrillo, P.D. Wang, C.M. Sotomayor Torres, N.N. Ledentsov, N.A. Bert: Solid State Commun. 94, 613 (1995)CrossRefGoogle Scholar
  60. 3.60
    A.B. Vorob’ev, A.K. Gutakovsky, V.Ya. Printz, M.A. Putyato: Appl. Phys. Lett. 77, 2976 (2000)Google Scholar
  61. 3.61
    Y. Hsu, W.L. Wang, T.S. Kuan: Phys. Rev. B 50, 4973 (1994)CrossRefGoogle Scholar
  62. 3.
    O. Brandt, K. Kanamoto, Y. Tokuda, N. Tsukada, O. Wada, J. Tanimura: Phys. Rev. B 48 17599 (1993)Google Scholar
  63. 3.63
    H. Kalt, W. Langbein, D. Luerssen, A. Dinger, J. Tümmler, J. Geurts, W. Braun, R. Nötzel, K. Ploog: In Proceedings of the 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, July 21–26, 1996, ed. by M. Scheffler and R. Zimmermann ( World Scientific, Singapore 1996 ) Vol. 3, p. 1747.Google Scholar
  64. 3.64
    N.N. Ledentsov, D. Litvinov, D. Gerthsen, I.P. Soshnikov, V.A. Shchukin, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, V.A. Volodin, M.D. Efremov, V.V. Preobrazhenskii, B.P. Semyagin, D. Bimberg, Zh.I. Alferov: J. Electr. Mater. 30, 463 (2001)CrossRefGoogle Scholar
  65. 3.65
    P.S. Kop’ev, N.N. Ledentsov: In Abstracts of Invited Lectures and Contributed Papers. The International Symposium on Nanostructures: Physics and Technology, ed. by P.S.Kop’ev (St. Petersburg, Russia, June 13–18, 1993 ) p. 26Google Scholar
  66. 3.66
    M.G. Lagally, D.E. Savage, M.C. Tringides: In Reflection High-Energy Electron Diffraction and Reflecting Electron Imaging of Surfaces 188, NATO Advanced Study Institute, Series B, ed. by P.K. Larsen and P.J. Dobson ( Plenum, New York 1988 ) p. 139.Google Scholar
  67. 3.67
    H.-J. Klaar, C.-A. Huang: Prakt. Metallogr. 31, 290 (1994)Google Scholar
  68. 3.68
    A. Rosenauer, S. Kaiser, T. Reisinger, J. Zweck, W. Gebhardt, D. Gerthsen: Optik (Stuttgart) 102, 63 (1996)Google Scholar
  69. 3.69
    D. Litvinov, A. Rosenauer, D. Gerthsen, N.N. Ledentsov, D. Bimberg, G.A. Ljubas, V.V. Bolotov, V.A. Volodin, M.D. Efremov, V.V. Preobrazhen-skii, B.R. Semyagin, I.P. Soshnikov• Appl. Phys.Lett. 8, 1080 (2002)Google Scholar
  70. 3.70
    A.A. Chernov: Modern Crystallography III ( Springer, Berlin 1984 )CrossRefGoogle Scholar
  71. 3.
    A.O. Golubok, G.M. Gur’yanov, V.N. Petrov, Yu.B. Samsonenko, S.Ya. Tipisev, G.E. Tsyrlin, N.N. Ledentsov: Fiz. Tekh. Poluprovodn. 28 516 (1994) [Semiconductors 28 317 (1994)]Google Scholar
  72. 3.
    N.N. Ledentsov, G.M. Gurianov, G.E. Tsyrlin, V.N. Petrov, Yu.B. Samsonenko, A.O. Golubok, S.Ya. Tipisev: Fiz. Tekh. Poluprovodn. 28 903 (1994) [Semiconductors 28 526 (1994)]Google Scholar
  73. 3.73
    J.-K. Zuo, R.J. Warmack, D.M. Zehner, J.F. Wendelken: Phys. Rev. B 47, 10743 (1993)CrossRefGoogle Scholar
  74. 3.74
    J.-K. Zuo, D.M. Zehner, J.F. Wendelken, R.J. Warmack, H.-N. Yang: Surf. Sci. 301, 233 (1994)CrossRefGoogle Scholar
  75. 3.75
    R. Koch, M. Borbonus, O. Haase, K.H. Rieder: Phys. Rev. Lett. 67, 3416 (1991)CrossRefGoogle Scholar
  76. 3.76
    R. Nötzel, L. Däweritz, K. Ploog: Phys. Rev. B 46, 4736 (1992)CrossRefGoogle Scholar
  77. 3.77
    M. Higashiwaki, M. Yamamoto, T. Higuchi, S. Shimomura, A. Adachi, Y. Okamoto, N. Sano, S. Hiyamizu: Jap. J. Appl. Phys. 35, L606 (1996)Google Scholar
  78. 3.78
    R. Nötzel, N.N. Ledentsov, L. Däweritz, K. Ploog: Method of Fabricating a Compositional Semiconductor Device, US patent US 5714765, issued 3.02.1998, priority 29. 01. 1991Google Scholar
  79. 3.
    N.N. Ledentsov: to be publishedGoogle Scholar
  80. 3.80
    E. Bauer: Z. Krist. 110, 372 (1958)CrossRefGoogle Scholar
  81. 3.81
    F.C. Frank, J.H. van der Merwe: Proc. Roy. Soc. London A 198, 205 (1949)Google Scholar
  82. 3.82
    M. Volmer, A. Weber: Z. Physik. Chem. 119, 277 (1926)Google Scholar
  83. 3.83
    I.N. Stranski, L. Krastanow: Sitzungsberichte der Akademie der Wissenschaften in Wien, Mathematisch-Naturwissenschaftliche Klasse 146, 797 (1937)Google Scholar
  84. 3.
    V.I. Marchenko: Pis’ma Zh. Eksp. Teor. Fiz. 33 397 (1981) [JETP. Lett. 33 381 (1981)]Google Scholar
  85. 3.85
    O.L. Alerhand, D. Vanderbilt, R.D. Meade, J.D. Joannopoulos: Phys. Rev. Lett. 61, 1973 (1988)Google Scholar
  86. 3.86
    D. Vanderbilt: Surf. Sci. 268, L300 (1992)Google Scholar
  87. 3.87
    K. Kern, H. Niehus, A. Schatz, P. Zeppenfeld, J. George, G. Comsa: Phys. Rev. Lett. 67, 855 (1991)Google Scholar
  88. 3.88
    P.D. Wang, N.N. Ledentsov, C.M. Sotomayor Torres, P.S. Kop’ev, V.M. Ustinov: Appl. Phys. Lett. 64, 1526 (1994)CrossRefGoogle Scholar
  89. 3.89
    V. Bressler-Hill, A. Lorke, S. Varma, K. Pond, P.M. Petroff, W.H. Weinberg: Phys. Rev. B 50, 8479 (1994)Google Scholar
  90. 3.90
    N.N. Ledentsov, P.D. Wang, C.M. Sotomayor Torres, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, P.S. Kop’ev: Phys. Rev. B 50, 12171 (1994)Google Scholar
  91. 3.91
    M.V. Belousov, N.N. Ledenstov, M.V. Maximov, P.D. Wang, I.N. Yassievich, N.N. Faleev, I.A. Kozin, V.M. Ustinov, P.S. Kop’ev, C.M. Sotomayor Torres: Phys. Rev. B 51, 14346 (1995)CrossRefGoogle Scholar
  92. 3.92
    N.N. Ledenstov, I.L. Krestnikov, M.V. Maximov, S.V. Ivanov, S.L. Sorokin, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg, C.M. Sotomayor Torres: Appl. Phys. Lett. 69, 1343 (1996)Google Scholar
  93. 3.93
    N.N. Ledenstov, I.L. Krestnikov, M.V. Maximov, S.V. Ivanov, S.L. Sorokin, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg, C.M. Sotomayor Torres: Appl. Phys. Lett. 70, 2766 (1997)Google Scholar
  94. 3.94
    R. Engelhardt, V. Türck, U.W. Pohl, D. Bimberg: J. Cryst. growth 184/185, 311 (1998)Google Scholar
  95. 3.95
    T Kümmell, R. Weigand, G. Bacher, A. Forchel: Appl. Phys. Lett. 73, 3106 (1998)CrossRefGoogle Scholar
  96. 3.96
    V. Türck, S. Rodt, O. Stier, R. Heitz, U.W. Pohl, D. Bimberg, R. Steingruber: Phys. Rev. B 61, 9944 (2000)CrossRefGoogle Scholar
  97. 3.
    I.M. Lifshits, V.V. Slyozov: Zh. Eksp. Teor. Fiz. 35 479 (1958) [Soy. Phys. JETP 8,331 (1959)]Google Scholar
  98. 3.98
    I.M. Lifshits, V.V. Slyozov: J. Phys. Chem. Solids 19, 35 (1961) 3.99 C. Wagner: Z. Electrochem. 65, 581 (1961)Google Scholar
  99. 3.100
    F.K. Men, W.E. Packard, M.B. Webb: Phys. Rev. Lett. 61, 2469 (1988)CrossRefGoogle Scholar
  100. 3.101
    O.L. Alerhand, A.N. Berker, J.D. Joannopoulos, D. Vanderbilt, R.J. Hamers, J.E. Demuth: Phys. Rev. Lett. 64, 2406 (1990)Google Scholar
  101. 3.102
    T.W. Poon, S. Yip, P.S. Ho, F.F. Abraham: Phys. Rev. Let. 65, 2161 (1990)Google Scholar
  102. 3.103
    G. Boishin, L.D. Sun, M. Hohage, P. Zeppenfeld: Surf. Sci. 512, 185 (2002)Google Scholar
  103. 3.
    V.I. Marchenko: Pis’ma Zh. Eksp. Teor. Fiz. 55 72 (1992) [JETP Lett. 55 Google Scholar
  104. 73.
  105. 3.105
    K.-O. Ng, D. Vanderbilt: Phys. Rev. B 52, 2177 (1995)Google Scholar
  106. 3.106
    R. Plass, J.A. Last, N.C. Bartelt, G.L. Kellogg: Nature 412, 875 (2001)CrossRefGoogle Scholar
  107. 3.107
    P. Zeppenfeld, M. Krzyzowski, C. Romainczuk, G. Comsa, M.G. Lagally: Phys. Rev. Lett. 72, 2737 (1994)CrossRefGoogle Scholar
  108. 3.108
    A.A. Maradudin, X. Huang, A.P. Mayer: J. Appl. Phys. 70, 53 (1991)CrossRefGoogle Scholar
  109. 3.109
    J. Tersoff, R.M. Tromp: Phys. Rev. Lett. 70, 2782 (1993)CrossRefGoogle Scholar
  110. 3.110
    A. Grossmann, W. Erley, J.B. Hannon, H. Ibach: Phys. Rev. Lett. 77, 127 (1996).CrossRefGoogle Scholar
  111. 3.111
    V.A. Shchukin, N.N. Ledentsov, D. Bimberg: In Self-Organized Processes in Semiconductor Alloys: Spontaneous Ordering, Composition Modulation, and 3D Islanding, ed. by D.M. Follstaedt, B.A. Joyce, A. Mascarenhas, T. Suzuki, Mat. Res. Soc. Symp. Proc. V. 583 ( Pittsburgh, USA 2000 ) p. 23Google Scholar
  112. 3.112
    L.G. Wang, P. Kratzer, M. Scheffler, N. Moll: Phys. Rev. Lett. 82, 4042 (1999)CrossRefGoogle Scholar
  113. 3.113
    T. Shitara, D.D. Vvedensky, J.H. Neave, B.A. Joyce: Mat. Res. Soc. Proc. 312, 267 (1993)CrossRefGoogle Scholar
  114. 3.114
    C. Ratch, A. Zangwill, P. Smilauer: Surf. Sci. 314, L937 (1994); C. Ratch, P. Smilauer, A. Zangwill, D. Vvedensky: J. Phys. I 6, 575 (1996)Google Scholar
  115. 3.115
    J.A. Stroscio, D.T. Pierce: Phys. Rev. B 49, 8522 (1994)CrossRefGoogle Scholar
  116. 3.116
    M. Meixner, E. Schöll, V.A. Shchukin, D. Bimberg: Phys. Rev. Lett. 87, 236101 (2001)Google Scholar
  117. 3.117
    A.B. Bortz, M.H. Kalos, J.L. Lebowitz: J. Comp. Phys. 17, 10 (1975)CrossRefGoogle Scholar
  118. 3.118
    V.A. Shchukin, N N Ledentsov, A. Hoffmann, D. Bimberg, I.P. Soshnikov, B.V. Volovik, V.M. Ustinov, D. Litvinov, D. Gerthsen: phys. stat. sol. (b), 224, 503 (2001)CrossRefGoogle Scholar
  119. 3.119
    Zh.I. Alferov, S.V. Ivanov, P.S. Kop’ev, A.V. Lebedev, N.N. Ledentsov, M.V. Maximov, I.V. Sedova, T.V. Shubina, A.A. Toropov: Superlattices Microstruct. 15, 65 (1994)CrossRefGoogle Scholar
  120. 3.120
    C. Benoit à la Guillaume, J.M. Denber, F. Salvan: Phys. Rev. 177, 567 (1969)CrossRefGoogle Scholar
  121. 3.121
    I.L. Krestnikov, M.V. Maximov, A.V. Sakharov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, C.M. Sotomayor Torres: J. Cryst. Growth 184/185, 545 (1998)Google Scholar
  122. 3.122
    N.N. Ledentsov, A.F. Tsatsul’nikov, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, I.L. Krestnikov, D. Bimberg, A. Hoffmann: Appl. Phys. Lett. 74, 161 (1999)Google Scholar
  123. 3.123
    I.L. Krestnikov, M. Strassburg, M. Caesar, A. Hoffmann, U.W. Pohl, D. Bim-berg, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen: Phys. Rev B 60, 8696 (1999)CrossRefGoogle Scholar
  124. 3.124
    L.C. Lenchyshyn, M.L.W. Thewalt, D.C. Houghton, J.-P. Noel, N.L. Rowell, J.C. Sturn, X. Xiao: Phys. Rev. B 47, 16655 (1993)CrossRefGoogle Scholar
  125. 3.125
    T. Baier, U. Mantz, K. Thonke, R. Sauer, F. Schäffler, H.J. Herzog: Proc. 22nd International Conference on the Physics of Semiconductors, ed. by D.J. Lockwood, Vancouver, Canada, August 15–19, 1994, Vol. 2 (World Scientific, Singapore 1995 ) p. 1568Google Scholar
  126. 3.
    O.P. Pchelyakov, Yu.B. Bolokhvityaniov, A.V. Dvurechenskii, L.V. Sokolov, A.I. Nikiforov, A.I. Yakimov: Fiz. Tekhn. Poluprovodn. 34 1281 (2000) [Semiconductors 34 (2000)]Google Scholar
  127. 3.127
    M.W. Dashiel, U. Denker, C. Müller, G. Costantini, C. Manzano, K. Kern, O.G. Schmidt: Appl. Phys. Lett. 80, 1279 (2002)CrossRefGoogle Scholar
  128. 3.128
    N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, M.V. Maximov, Zh.I. Alferov, J.A. Lott: IEEE J. Sel. Top. Quantum Electron. 6, 439 (2000)CrossRefGoogle Scholar
  129. 3.129
    I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg: phys. stat. sol. (a) 183, 207 (2001)CrossRefGoogle Scholar
  130. 3.130
    N.N. Ledentsov, J. Böhrer, M. Beer, F. Heinrichsdorff, M. Grundmann, D. Bimberg, S.V. Ivanov, B.Ya. Meltser, I. N. Yassievich, N.N. Faleev, P.S. Kop’ev, Zh.I. Alferov: Phys. Rev. B 52, 14058 (1995)Google Scholar
  131. 3.
    A. Makarov, N.N. Ledenstov, A.F Tsatsul’nikov, G.E. Tsyrlin, V.A. Egorov, V.M. Ustinov, N.D. Zakharov, P. Werner: Fiz. Tekhn Poluprovodn. 36 (2002) [Semiconductors 36 (2002)]Google Scholar
  132. 3.132
    N.D. Zakharov, P. Werner, U. Gösele, G. Gerth, G. Cirlin, V.A. Egorov, B.V. Volovik: Mat. Sci. Engineering B 87, 92 (2001)CrossRefGoogle Scholar
  133. 3.133
    N.D. Zakharov, G.E. Cirlin, P. Werner, U. Gösele, G. Gerth, B.V. Volovik, N.N. Ledentsov, V.M. Ustinov: In Proceedings of the 9th International Symposium on Nanostructures: Physics and Technology 2001 (St. Petersburg, Russia, June 18–22, 2001 ) p. 21Google Scholar
  134. 3.134
    L.P. Rokinson, D.C. Tsui, J.L. Benton, Y.-H. Xie: Appl. Phys. Lett. 75, 2413 (1999)CrossRefGoogle Scholar
  135. 3.135
    A.R. Kovsh, A.E. Zhukov, N.A. Maleev, S.S. Mikhrin, A.V. Vasil’ev, Yu.M. Shernyakov, D.A. Livshits, M.V. Maximov, D.S. Sizov, N.V. Kryzhanovskaya, N.A. Pikhtin, V.A. Kapitonov, I.S. Tarasov, N.N. Ledentsov, V.M. Ustinov, J.S. Wang, L.Wei, G. L.n, J.Y. Chi: In Proc. 10th Int. Symp. on Nanostructures: Physics and Technology (St. Petersburg, Russia, June 17–21, 2002 ) p. 395Google Scholar
  136. 3.136
    A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, J. Holst, A. Hoffmann, D. Bimberg, I.P. Soshnikov, D. Gerthsen: phys. stat. sol. (b) 216, 435 (1999)Google Scholar
  137. 3.137
    A.F. Tsatsul’nikov, I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, A.P. Kartashova, A.S. Usikov, Zh.I. Alfeorv, N.N. Ledentsov, A. Strittmatter, A. Hoffmann, D. Bimberg, I.P. Soshnikov, D. Litvinov, A.P. Rosenauer, D. Gerthsen, A. Plaut: Semicond. Sci. Technol. 15, 766 (2000)CrossRefGoogle Scholar
  138. 3.138
    W.J. Schaffer, M.D. Lind, S.P. Kowalczyk, R.W. Grant: J. Vac. Sci. Technol. B 1, 688 (1983)CrossRefGoogle Scholar
  139. 3.139
    B.F. Lewis, F.J. Grunthaner, A. Madhukar, R. Fernandez, J. Maserjian: J. Vac. Sci. Technol. B 2, 419 (1984)CrossRefGoogle Scholar
  140. 3.140
    F.J. Grunthaner, M.Y. Yen, T.C. Lee, A. Madhukar, B.F. Lewis: Appl. Phys. Lett. 46, 983 (1985)Google Scholar
  141. 3.141
    M.Y. Yen, A. Madhukar, B.F. Lewis, R. Fernandez, L. Eng, F.J. Grunthaner: Surf. Sci. 174, 606 (1986) (submitted September 1, 1985 )Google Scholar
  142. 3.142
    J.M. Gibson, R. Hull, J.C. Bean, M.M.J. Treacy: Appl. Phys. Lett. 46, 649 (1985)CrossRefGoogle Scholar
  143. 3.143
    L. Goldstein, F. Glas, J.Y. Marzin, M.N. Charasse, G. Le Roux: Appl. Phys. Lett. 47, 1099 (1985) (submitted July 26, 1985; published November 15, 1985 )Google Scholar
  144. 3.144
    F. Glas, C. Guille, P. Hénoc, F. Houzay: Inst. Phys. Conf. Ser. 87, Sect. 2, p. 71 (1987)Google Scholar
  145. 3.145
    S. Guha, A. Madhukar, K.C. Rajkumar: Appl. Phys. Lett. 57, 2110 (1990)CrossRefGoogle Scholar
  146. 3.146
    M. Tabuchi, S. Noda, A. Sasaki: In Science and Technology of Mesoscopic Structures, ed. by S. Namba, C. Hamaguchi, and T. Ando ( Springer, Tokyo 1992 ) p. 379Google Scholar
  147. 3.147
    J.M. Moison, F. Houzay, F. Barthe, L. Leprince, E. André, O. Vatel: Appl. Phys. Lett. 64, 196 (1994)CrossRefGoogle Scholar
  148. 3.148
    D. Leonard, M. Krishnamurthy, C.M. Reaves, S.P. Denbaars, P.M. Petroff: Appl. Phys. Lett. 63, 3203 (1993)CrossRefGoogle Scholar
  149. 3.149
    N.N. Ledentsov, M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Böhrer, F. Heinrichsdorff, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov: In Proceedings of the 22nd International Conference on Physics of Semiconductors, ed. by D.J. Lockwood, Vancouver, Canada, August 1994 (World Scientific, Singapore 1994) Vol. 3, p. 1855Google Scholar
  150. 3.150
    J.-Y. Marzin, G.M. Gérard, A. Izraël, G. Barrier, D. Bastard: Phys. Rev. Lett. 73, 716 (1994)CrossRefGoogle Scholar
  151. 3.151
    M. Grundmann, J. Christen, N.N. Ledentsov, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov: Phys. Rev. Lett. 74, 4043 (1995)CrossRefGoogle Scholar
  152. 3.152
    N.N. Ledentsov, M. Grundmann, N. Kirstaedter, O. Schmidt, R. Heitz, J. Böhrer, D. Bimberg, V.M. Ustinov, V.A. Shchukin, P.S. Kop’ev, Zh.I. Alferov, S.S. Ruvimov, A.O. Kosogov, P. Werner, U. Richter, U. Gösele, J. Heydenreich: In Proceedings of the 7th International Conference on Modulated Semiconductor Structures, Madrid, Spain, July 1995, Solid State Electron. 40, 785 (1996)CrossRefGoogle Scholar
  153. 3.153
    D. Vanderbilt, L.K. Wickham: In Evolution of Thin-Film and Surface Microstructures, ed. by C.V. Thompson, J.Y. Tsao, and D.J. Srolovitz, Mat. Res. Soc. Symp. Proc. 202, 555 ( MRS, Pittsburgh 1991 )Google Scholar
  154. 3.154
    C. Ratsch, A. Zangwill: Surf. Sci. 293, 123 (1993)CrossRefGoogle Scholar
  155. 3.155
    V.A. Shchukin, N.N. Ledentsov, P.S. Kop’ev, D. Bimberg: Phys. Rev. Lett. 75, 2968 (1995)CrossRefGoogle Scholar
  156. 3.156
    I. Daruka, A.-L. Barabâsi: Phys. Rev. Lett. 79, 3708 (1997)CrossRefGoogle Scholar
  157. 3.157
    V.A. Shchukin, D. Bimberg: Rev. Mod. Phys. 71, 1125 (1999)CrossRefGoogle Scholar
  158. 3.158
    C. Priester, M. Lannoo: Phys. Rev. Lett. 75, 73 (1995)CrossRefGoogle Scholar
  159. 3.159
    A. Madhukar, P. Chen, Q. Xie, A. Konkar, T.R. Ramachandran, N.P. Kobayashi, R. Viswanathan: In Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, Proceedings of the NATO Advanced Workshop, February 20–24, 1995, Ringberg Castle, Germany, ed. by K. Eberl, P. Petroff, and P. Demeester ( Kluwer, Dordrecht 1995 ) p. 19Google Scholar
  160. 3.160
    N. Kobayashi, T.R. Ramachandran, P. Chen, A. Madhukar: Appl. Phys. Lett. 68, 3299 (1996)CrossRefGoogle Scholar
  161. 3.161
    K.M. Chen, D.E. Jesson, S.J. Pennycook, T. Thundat, R.J. Warmack: Proc. Mat. Res. Soc. Symp. 399, 271 (1995)CrossRefGoogle Scholar
  162. 3.162
    D.E. Jesson, G. Chen, K.M. Chen, S.J. Pennycook: Phys. Rev. Lett. 80, 5156 (1998)CrossRefGoogle Scholar
  163. 3.163
    V.A. Shchukin, N.N. Ledentsov, V.M. Ustinov, Yu.G. Musikhin, V.B. Volovik, A. Schliwa, O. Stier, R. Heitz, D. Bimberg: In Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films, ed. by A.-L. Barabâsi, E. Jones, and J. Mirecki Millunchick, Mat. Res. Soc. Symp. Proc. 618, 79–90 ( MRS, Pittsburgh 2000 )Google Scholar
  164. 3.164
    N.N. Ledentsov, V.A. Shchukin, D. Bimberg, V.M. Ustinov, N.A. Cherkashin, Yu.G. Musikhin, B.V. Volovik, G.E. Cirlin, Zh.I. Alferov: Semicond. Sci. and Technol. 16, 502 (2001)CrossRefGoogle Scholar
  165. 3.165
    R. Leon, J. Wellman, X.Z. Liao, J. Zuo, D.J.H. Cockayne: Appl. Phys. Lett. 76, 1558 (2000)CrossRefGoogle Scholar
  166. 3.166
    D.J. Eaglesham, M. Cerullo: Phys. Rev. Lett. 64, 1943 (1990)CrossRefGoogle Scholar
  167. 3.167
    Y.-W. Mo, D.E. Savage, B.S. Swartzentruber, M.G. Lagally: Phys. Rev. Lett. 65, 1020 (1990)CrossRefGoogle Scholar
  168. 3.168
    R.J. Asaro, W.A. Tiller: Metall. Trans. 3, 1789 (1972)CrossRefGoogle Scholar
  169. 3.
    M.A. Grinfel’d: Dokl. Akad. Nauk SSSR 290 1358 (1986) [Sov. Phys. Dokl. 31, 831 (1986)]Google Scholar
  170. 3.170
    D. Srolovitz: Acta Metall. 37, 621 (1989)CrossRefGoogle Scholar
  171. 3.171
    B.J. Spencer, P.W. Voorhees, S.H. Davis: Phys. Rev. Lett. 67, 3696 (1991)CrossRefGoogle Scholar
  172. 3.172
    D.E. Jesson, S.J. Pennycook, J.-M. Baribeau, D.C. Houghton: Phys. Rev. Lett. 71, 1744 (1993)CrossRefGoogle Scholar
  173. 3.173
    W.H. Yang, D.J. Srolovitz: Phys. Rev. Lett. 71, 1593 (1993)CrossRefGoogle Scholar
  174. 3.174
    E. Pehlke, N. Moll, A. Kley, M. Scheffler: Appl. Phys. A 65, 525 (1997)CrossRefGoogle Scholar
  175. 3.175
    B.K. Chakraverty: J. Phys. Chem. Solids 28, 2401 (1967)CrossRefGoogle Scholar
  176. 3.176
    J. Drucker: Phys. Rev. B 48, 18203 (1993)CrossRefGoogle Scholar
  177. 3.177
    A. Madhukar, Q. Xie, P. Chen, A. Koknar: Appl. Phys. Lett. 64, 2727 (1994)CrossRefGoogle Scholar
  178. 3.178
    D. Leonard, K. Pond, P.M. Petroff: Phys. Rev. B 50, 11687 (1994)CrossRefGoogle Scholar
  179. 3.179
    F. Hatami, N.N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, S.V. Ivanov, B.Ya. Meltser, P.S. Kop’ev, Zh.I. Alferov: Appl. Phys. Lett. 67, 656 (1995)Google Scholar
  180. 3.180
    A. Ponchet, A. Le Corre, H. L’Haridon, B. Lambert, S. Salaün: Appl. Phys. Lett. 67, 1850 (1995)CrossRefGoogle Scholar
  181. 3.181
    R. Leon, S. Fafard, D. Leonard, J.L. Merz, P.M. Petroff: Appl. Phys. Lett. 67, 521 (1995)CrossRefGoogle Scholar
  182. 3.182
    R. Apetz, L. Vescan, A. Hartmann, C. Dieker, H. Lüth: Appl. Phys. Lett. 66, 445 (1995)CrossRefGoogle Scholar
  183. 3.183
    P. Schittenhelm, M. Gail, J. Brunner, J.F. Nützel, G. Abstreiter: Appl. Phys. Lett. 67, 1292 (1995)CrossRefGoogle Scholar
  184. 3.184
    D.E. Jesson, K.M. Chen, S.J. Pennycook: MRS Bulletin 21, 31 (1996)Google Scholar
  185. 3.185
    S.H. Xin, P.D. Wang, A. Yin, C. Kim, M. Dobrowolska, J.L. Merz, J.K. Furdyna: Appl. Phys. Lett. 69, 3884 (1996)CrossRefGoogle Scholar
  186. 3.186
    V.M. Ustinov, E.R. Weber, S. Ruvimov, Z. Liliental-Weber, A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, A.F. Tsatsul’nikov, P.S. Kop’ev: Appl. Phys. Lett. 72, 362 (1998)CrossRefGoogle Scholar
  187. 3.187
    G.E. Cirlin, V.G. Dubrovskii, V.N. Petroff, N.K. Polyakov, N.P. Korneeva, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.I. Komyak, N.N. Ledentsov, Zh.I. Alferov, D. Bimberg: In Proceedings of the 6th International Symposium on Nanostructures: Physics and Technology, St. Petersburg, Russia, June 22–26, 1998Google Scholar
  188. 3.188
    N.N. Ledentsov, V.M. Ustinov, A.Yu.Egorov, A.E. Zhukov, M.V. Maximov, I.G. Tabatadze, P.S. Kop’ev: Fiz. Tekh. Poluprovodn. 28, 1484 (1994) [Semiconductors 28, 832 (1994)] (submitted December 29, 1993 )Google Scholar
  189. 3.189
    N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, S.S. Ruvimov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov, U. Richter, P. Werner, U. Gösele, J. Heydenreich: Electron. Lett. 30, 1416 (1994)CrossRefGoogle Scholar
  190. 3.190
    D. Bimberg, N. Kirstaedter, N.N. Ledentsov, Zh.I. Alferov, P.S. Kop’ev, V.M. Ustinov: IEEE Journal of Selected Topics in Quantum Electronics, 3, 196 (1997)CrossRefGoogle Scholar
  191. 3.191
    D. Bimberg, M. Grundmann, N.N. Ledentsov, S.S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov: Thin Solid Films 267, 32 (1995)CrossRefGoogle Scholar
  192. 3.192
    G. Cirlin, G.M. Guryanov, A.O. Golubok, S.Ya. Tipissev, N.N. Ledentsov, P.S. Kop’ev, M. Grundmann, D. Bimberg: Appl. Phys. Lett. 67, 97 (1995)CrossRefGoogle Scholar
  193. 3.193
    M. Grundmann, N.N. Ledentsov, R. Heitz, L. Eckey, J. Christen, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov: phys. stat. sol. (b) 188, 249 (1995)CrossRefGoogle Scholar
  194. 3.194
    V.A. Shchukin, N.N. Ledentsov, M. Grundmann, P.S. Kop’ev, D. Bimberg: Surf. Sci. 352–354, 117 (1996)CrossRefGoogle Scholar
  195. 3.195
    V.A. Shchukin, N.N. Ledentsov, M. Grundmann, D. Bimberg: In Optical Properties of Low Dimensional Semiconductors, NATO ASI Series, Series E: Applied Physics, ed. by G. Abstreiter, A. Aydinli, and J.-P. Leburton ( Kluwer, Dordrecht 1997 ) p. 257Google Scholar
  196. 3.196
    A.Yu. Kaminski, R.A. Suris: In Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, Germany, July 22–27, 1996, ed. by M. Scheffler and R. Zimmermann ( World Scientific, Singapore 1996 ), Vol. 2, p. 1337Google Scholar
  197. 3.197
    K.M. Chen, D.E. Jesson, S.J. Pennycook, T. Thundat, R.J. Warmack: Phys. Rev. B 56, R1700 (1997)CrossRefGoogle Scholar
  198. 3.198
    C. Duport, C. Priester, J. Villain: in Morphological Organization in Epitaxial Growth and Removal, ed. by Z. Zhang and M. Lagally ( World Scientific, Singapore 1997 )Google Scholar
  199. 3.199
    E. Pehlke, N. Moll, M. Scheffler: In Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, Germany, July 22–27, 1996, ed. by M. Scheffler and R. Zimmermann ( World Scientific, Singapore 1996 ), Vol. 2, p. 1301Google Scholar
  200. 3.200
    B.J. Spencer, J. Tersoff: Phys. Rev. Lett. 79, 4858 (1997)CrossRefGoogle Scholar
  201. 3.201
    A.G. Khachaturyan: Theory of Phase Transformations and the Structure of Solid Solutions ( Nauka, Moscow 1974 ) in RussianGoogle Scholar
  202. 3.202
    A.G. Khachaturyan: Theory of Structural Transformations in Solids ( Wiley, New York 1983 )Google Scholar
  203. 3.203
    A.L. Roitburd: Phys. Status Solidi (a) 37, 329 (1976)CrossRefGoogle Scholar
  204. 3.204
    D. Wolf: Phys. Rev. Lett. 70, 627 (1993)CrossRefGoogle Scholar
  205. 3.205
    E. Steimetz, F. Scheinle, J.-T. Zettler, W. Richter: J. Cryst. Growth 170, 208 (1997)CrossRefGoogle Scholar
  206. 3.206
    K. Georgsson, N. Carlsson, L. Samuelson, W. Seifert, L.R. Wallenberg: Appl. Phys. Lett. 67, 2981 (1995)CrossRefGoogle Scholar
  207. 3.207
    S.S. Ruvimov, P. Werner, K. Scheerschmidt, U. Richter, U. Gösele, J. Heydenreich, N.N. Ledentsov, M. Grundmann, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, P.S. Kop’ev, Zh.I. Alferov: Phys. Rev. B 51, 14766 (1995) 3.208 S.S. Ruvimov, K. Scheerschmidt: phys. stat. sol. (a) 150, 471 (1995)CrossRefGoogle Scholar
  208. 3.209
    I.P. Ipatova, V.G. Malyshkin, V.A. Shchukin: J. Appl. Phys. 74, 7198 (1993)CrossRefGoogle Scholar
  209. 3.210
    I.P. Ipatova, V.G. Malyshkin, V.A. Shchukin: Phil. Mag. B 70, 557 (1994)CrossRefGoogle Scholar
  210. 3.211
    M. Grundmann, O. Stier, D. Bimberg: Phys. Rev. B, 52, 11969 (1995)CrossRefGoogle Scholar
  211. 3.212
    K. Portz, A.A. Maradudin: Phys. Rev. B 16, 3535 (1977)CrossRefGoogle Scholar
  212. 3.213
    V.A. Shchukin, D. Bimberg: Appl. Phys. A 67, 687 (1998)CrossRefGoogle Scholar
  213. 3.214
    N.N. Ledentsov, D. Bimberg, Yu.M. Shernyakov, V. Kochnev, M.V. Maximov, A.V. Sakharov, I.L. Krestnikov, A.Yu. Egorov, A.F. Tsatsul’nikov, B.V. Volovik, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, A.O. Kosogov, P. Werner: Appl. Phys. Lett. 70, 2888 (1997)CrossRefGoogle Scholar
  214. 3.215
    G.-X. Qian, R.M. Martin, D.J. Chadi: Phys. Rev. B 38, 7649 (1998)CrossRefGoogle Scholar
  215. 3.216
    N. Moll, A. Kley, E. Pehlke, M. Scheffler: Phys. Rev. B 54, 8844 (1996)CrossRefGoogle Scholar
  216. 3.217
    J. Tersoff: Phys. Rev. B. 43, 9377 (1991)CrossRefGoogle Scholar
  217. 3.218
    C. Roland, G.H. Gilmer: Phys. Rev. B 47, 16286 (1993)CrossRefGoogle Scholar
  218. 3.219
    J.A. Floro, G.A. Lucadamo, E. Chason, L.B. Freund, M. Sinclair, R.D. Twesten, R.Q. Hwang: Phys. Rev. Lett. 80, 4717 (1998)CrossRefGoogle Scholar
  219. 3.220
    J. Tersoff, Y.H. Phang, Zh. Zhang, M.G. Lagally: Phys. Rev. Lett. 75, 2730 (1995)CrossRefGoogle Scholar
  220. 3.221
    J. Tersoff: Phys. Rev. Lett. 77, 2017 (1996)CrossRefGoogle Scholar
  221. 3.222
    J.E. Guyer, P.W. Voorhees: Phys. Rev. B 54, 11710 (1996)CrossRefGoogle Scholar
  222. 3.223
    F. Léonard, R.F. Desai: Phys. Rev. B 57, 4805 (1998)CrossRefGoogle Scholar
  223. 3.224
    I.P. Ipatova, V.G. Malyshkin, A.A. Maradudin, V.A. Shchukin, R.F. Wallis: Phys. Rev. B 57, 12969 (1998)CrossRefGoogle Scholar
  224. 3.225
    B.J. Spencer, P.W. Voorhees, J. Tersoff: Phys. Rev. B 64, 235318 (2001)Google Scholar
  225. 3.226
    S.V. Ghasias, A. Madhukar: in Proceedings of the SPIE Symposium on Growth of Advanced Semiconductor Structures (SPIE, Bellingham, Washington, USA 1988 ) Vol. 944, p. 16Google Scholar
  226. 3.227
    S.V. Ghasias, A. Madhukar: J. Vac. Sci. Technol. B 7, 264 (1989)CrossRefGoogle Scholar
  227. 3.228
    Y. Chen, J. Washburn: Phys. Rev. Lett. 77, 4046 (1996)CrossRefGoogle Scholar
  228. 3.229
    A.-L. Barabâsi: Appl. Phys. Lett. 70, 2565 (1997)CrossRefGoogle Scholar
  229. 3.230
    A. Polimene, A. Patané, M. Capizzi, F. Martelli, L. Nasi, G. Salviatti: Phys. Rev. B 53, R4213 (1996)CrossRefGoogle Scholar
  230. 3.231
    M. Berti, A.V. Drigo, G. Rossetto, G. Torzo: J. Vac. Sci. Technol. B 15, 1794 (1997)CrossRefGoogle Scholar
  231. 3.232
    D.J. Bottomley: Appl. Phys. Lett. 72, 783 (1998)CrossRefGoogle Scholar
  232. 3.233
    K. Ozasa, Y. Aoyagi, Y.J. Park, L. Samuelson: Appl. Phys. Lett. 71, 797 (1997)CrossRefGoogle Scholar
  233. 3.234
    F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, P. Werner: Appl. Surf. Sci. 123/124, 725 (1998)Google Scholar
  234. 3.235
    C. Li, C. Jagadish: Appl. Phys. Lett. 69, 2551 (1996)CrossRefGoogle Scholar
  235. 3.236
    K. Muraki, S. Fukatsu, Y. Shiraki, R. Ito: Appl. Phys. Lett. 61, 557 (1992).CrossRefGoogle Scholar
  236. 3.237
    U. Woggon, W. Langbein, J.M. Hvam, A. Rosenauer, T. Remmele, D. Gerthsen: Appl. Phys. Lett. 71, 377 (1997)CrossRefGoogle Scholar
  237. 3.238
    A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Förster, R. Schmidt: Phys. Rev. B 61, 8276 (2000)CrossRefGoogle Scholar
  238. 3.239
    M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.A. Bert, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, I.P. Soshnikov, P. Werner: Appl. Phys. Lett. 75, 2347 (1999)CrossRefGoogle Scholar
  239. 3.240
    T.I. Kamins, E.C. Carr, R.S. Williams, S.J. Rosner: J. Appl. Phys. 81, 211 (1997)CrossRefGoogle Scholar
  240. 3.241
    T.I. Kamins, G. Medeiros-Ribeiro, D.A.A. Ohlberg, R. Stanley Williams: Appl. Phys. A: 67, 1 (1998)CrossRefGoogle Scholar
  241. 3.242
    J. Tersoff, B.J. Spencer, A. Rastelli, H. von Känel: Phys. Rev. Lett. 89, 196104 (2002)Google Scholar
  242. 3.243
    N.N. Ledentsov: In Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, Germany, July 22–27, 1996, ed. by M. Scheffler and R. Zimmermann ( World Scientific, Singapore 1996 ) Vol. 1, p. 21Google Scholar
  243. 3.244
    G.E. Cirlin, V.G. Dubrovskii, V.N. Petrov, N.K. Polyakov, N.P. Korneeva, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.I. Komyak, V.M. Ustinov, A.Yu. Egorov, A.R. Kovsh, M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, M. Grundmann, D. Bimberg: Semicond. Sci. Technol. 13, 1262 (1998)CrossRefGoogle Scholar
  244. 3.245
    T. Mano, H. Fujioka, K. Ono, Y. Watanabe, M. Oshima: Appl. Surf. Sci. 130–132, 768 (1998)Google Scholar
  245. 3.246
    N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg: Proc. 7th Int. Symp. Nanostructures: Physics and Technology (St. Petersburg, Russia, 1999 ) p. 216Google Scholar
  246. 3.247
    N.D. Zakharov, P. Werner, R. Heitz, D. Bimberg, N.N. Ledentsov, V.M. Ustinov, D.V. Denisov, Zh.I. Alferov, G.E. Cirlin: Mat. Res. Soc. Symp. Proc. 571, 247 (1999), ed. by H. Lee, S. Moss, D. Norris, and D. Ila (Pittsburgh 1999 )Google Scholar
  247. 3.248
    R. Heitz, N.N. Ledentsov, D. Bimberg, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, I.P. Soshnikov, N.D. Zakharov, P. Werner, U. Gösele: Appl. Phys. Lett. 74, 1701 (1999)CrossRefGoogle Scholar
  248. 3.
    V.N. Petrov, N.K. Polyakov, V.A. Egorov, G.E. Cirlin, N.D. Zakharov, P. Werner, V.M. Ustinov, D.V. Denisov, N.N. Ledentsov, Zh.I. Alferpv: Fiz. Tekh. Poluprovodn. 34, 838 (2000) [Semiconductors, 34, 841 (2000)]Google Scholar
  249. 3.250
    S. Nakamura, T. Mukai, M. Senoh: Jpn. J. Appl. Phys. Part 2, 32, L8 (1993)CrossRefGoogle Scholar
  250. 3.251
    S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, H. Kioku, Y. Sugimoto: Jpn. J. Appl. Phys. Part 2, 35, L74 (1996)CrossRefGoogle Scholar
  251. 3.252
    I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike, H. Amano: Electron. Lett. 32, 1105 (1996)CrossRefGoogle Scholar
  252. 3.253
    I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Z.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg: Appl. Phys. Lett. 75, 1192 (1999)CrossRefGoogle Scholar
  253. 3.254
    H. Morkoc: Nitride Semiconductors and Devices (Springer, Berlin 1999) 3.255 S.C. Jain, M. Willander, J. Narayana, R. Van Overstraeten: J. Appl. Phys. 87, 965 (2000)Google Scholar
  254. 3.256
    S. Chichibu, T. Azuhata, T. Sota, S. Nakamura: Appl. Phys. Lett. 69, 4188 (1996)CrossRefGoogle Scholar
  255. 3.257
    Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, S. Nakamura: Appl. Phys. Lett. 70, 981 (1997)CrossRefGoogle Scholar
  256. 3.258
    Y. Narukawa, K. Sawada, Y. Kawakami, S. Fujita, S. Fujita, S. Nakamura: J. Cryst. Growth 189, 606 (1998)CrossRefGoogle Scholar
  257. 3.259
    N.N. Ledentsov, Z.I. Alferov, I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, I.P. Soshnikov, A.F. Tsatsul’nikov, D. Bimberg, A. Hoffmann: Compound Semicond. 5, 61 (1999)Google Scholar
  258. 3.260
    Yu.G. Musikhin, D. Gethsen, D.A. Bedarev, N.A. Bert, W.V. Lundin, A.F. Tsatsul’nikov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg: Appl. Phys. Lett. 80, 2099 (2002)CrossRefGoogle Scholar
  259. 3.261
    D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Schön, M. Heuken, A. Rizzi: phys. stat. sol. (b) 177, 145 (2000)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2004

Authors and Affiliations

  • Vitaly A. Shchukin
    • 1
    • 2
  • Nikolai N. Ledentsov
    • 1
    • 2
  • Dieter Bimberg
    • 1
  1. 1.Technische Universtität BerlinBerlinGermany
  2. 2.A.F. Ioffe Physical Technical InstituteRussian Academy of SciencesSt. PetersburgRussia

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