Abstract
Liquid phase epitaxy (LPE) is the deposition from a liquid phase (a solution or melt) of a thin single crystalline layer isostructural with the substrate crystal [5.1]. Usually LPE is performed using a solution as the liquid phase, because this is advantageous against the cases when a melt is used. In comparison to the growth from melts, growth from solutions:
-
(i)
allows for epitaxy at lower temperatures
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(ii)
enables better control of the amount of the crystalline phase grown or removed by dissolution
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(iii)
leads to crystallization of layers with lower densities of defects, whether intrinsic (point defects) or extrinsic (e.g., impurities dissolved from crucible material)
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(iv)
makes it possible to grow layers sequentially from a series of solutions of differing composition, but with very similar and readily controlled liquidus temperature (liquidus is the border-line on the “temperature—concentration (composition)” phase diagram between the pure liquid region and the solid—liquid co-existence region (see Sect. 11.3)), and last but not least
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(v)
allows for considerable reduction of the vapor pressure of volatile components of the compounds (e.g., P in the case of InP and As in the case of GaAs) by working at temperatures far below the melting point.
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Herman, M.A., Richter, W., Sitter, H. (2004). Liquid Phase Epitaxy. In: Epitaxy. Springer Series in MATERIALS SCIENCE, vol 62. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07064-2_5
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