Epitaxy pp 321-350 | Cite as

Atomistic Aspects

  • Marian A. Herman
  • Wolfgang Richter
  • Helmut Sitter
Part of the Springer Series in MATERIALS SCIENCE book series (SSMATERIALS, volume 62)

Abstract

The physics of epitaxial crystal growth is usually based on two kinds of theoretical approximations, i.e., a macroscopic approach using phenomenological thermodynamics [12.1], and a microscopic, or atomistic approach, using stochastic models [12.2]. So far the principles of epitaxy have been discussed in a macroscopic, thermodynamic approach. Here, the microscopic aspects of epitaxial crystallization will be considered, mainly in the frames of statistical physics [12.3] and quantum mechanics of chemical bonds in crystals [12.4]. Since the epitaxial growth process takes place at the surface of a single-crystalline substrate, one has to be aware of the influence which the surface structure exerts on this process (for more information see Chap. 13)

Keywords

Entropy Crystallization Migration GaAs Posit 

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Copyright information

© Springer-Verlag Berlin Heidelberg 2004

Authors and Affiliations

  • Marian A. Herman
    • 1
  • Wolfgang Richter
    • 2
    • 3
  • Helmut Sitter
    • 4
  1. 1.Wissenschaftliches ZentrumPolnischen Akademie der WissenschaftenWienAustria
  2. 2.Institut für FestkörperphysikTechnische Universität BerlinBerlinGermany
  3. 3.INFM, Dipartimento di FisicaUniversità di Roma Tor VergataRomaItaly
  4. 4.Johannes-Kepler-UniversitätLinzAustria

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