Abstract
The physics of epitaxial crystal growth is usually based on two kinds of theoretical approximations, i.e., a macroscopic approach using phenomenological thermodynamics [12.1], and a microscopic, or atomistic approach, using stochastic models [12.2]. So far the principles of epitaxy have been discussed in a macroscopic, thermodynamic approach. Here, the microscopic aspects of epitaxial crystallization will be considered, mainly in the frames of statistical physics [12.3] and quantum mechanics of chemical bonds in crystals [12.4]. Since the epitaxial growth process takes place at the surface of a single-crystalline substrate, one has to be aware of the influence which the surface structure exerts on this process (for more information see Chap. 13)
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Herman, M.A., Richter, W., Sitter, H. (2004). Atomistic Aspects. In: Epitaxy. Springer Series in MATERIALS SCIENCE, vol 62. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07064-2_12
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