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Patterned Wafer Effects

  • Chapter
Chemical-Mechanical Planarization of Semiconductor Materials

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 69))

Abstract

Chemical-mechanical polishing (CMP) is used in integrated circuit manufacturing to remove material from patterned wafer surfaces. The term “polishing” or “planarization” is used to describe two types of processes: 1) topography reduction of surface features that result from deposition, etch, or other thin-film processes, and 2) removal (“polish back”) of films leaving material only in desired recessed regions. The later case is also called a “damascene” or “polish-back” CMP process.

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  1. D. Boning
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  2. D. Hetherington
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Editors and Affiliations

  1. Rodel Inc., 14625 NW Skyline Boulevard, 97231, Portland, OR, USA

    Michael R. Oliver (Rodel Fellow) (Rodel Fellow)

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Boning, D., Hetherington, D. (2004). Patterned Wafer Effects. In: Oliver, M.R. (eds) Chemical-Mechanical Planarization of Semiconductor Materials. Springer Series in Materials Science, vol 69. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-06234-0_9

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  • DOI: https://doi.org/10.1007/978-3-662-06234-0_9

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