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Vertical-Cavity Surface-Emitting Laser Devices pp 227–258Cite as

Low-Power Vertical-Cavity Surface-Emitting Lasers and Microcavity Light-Emitting Diodes Based on Apertured-Microcavities

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Part of the book series: Springer Series in Photonics ((PHOTONICS,volume 6))

Abstract

Iga is generally credited with pioneering the vertical-cavity surface-emitting laser (VCSEL) [1]. From 1979 into the mid-1980s Iga’s group at the Tokyo Institute of Technology was one of the few laboratories developing the VCSEL. In the mid-1980s Gourley and his co-workers began studying VCSELs fabricated directly from III–V epitaxy, using Al x Ga1−x As/Al y Ga1−y As distributed Bragg reflectors (DBRs) [2]. Since Gourley’s work was based on photopumping, the practical aspects of all-epitaxial VCSELs was yet to be demonstrated. In 1989 Jewell and his co-workers demonstrated electrically injected, all-epitaxial VCSELs with low threshold current [3], and this result generated a great deal of interest in VCSEL devices. Since these demonstrations, the powerful approach that VCSELs provide for two-dimensional arrays of low power, high-speed light emitters has grown rapidly in appreciation.

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  1. Tokyo Institute of Technology, Koyama and Miyamoto & Uenohara Labs., Precision & Intelligence Laboratory, 4259 Nagatsuta, 226-8503, Midori-ku, Yokohama, Japan

    Kenichi Iga

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Deppe, D.G. (2003). Low-Power Vertical-Cavity Surface-Emitting Lasers and Microcavity Light-Emitting Diodes Based on Apertured-Microcavities. In: Li, H.E., Iga, K. (eds) Vertical-Cavity Surface-Emitting Laser Devices. Springer Series in Photonics, vol 6. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-05263-1_7

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