SIMS — Secondary Ion Mass Spectrometry

  • R. J. MacDonald
  • B. V. King
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 23)

Abstract

Secondary ion mass spectroscopy (SIMS) is an ion beam analysis technique useful for characterising the top few micrometres of samples. Primary ions of energy 0.5–20 keV, commonly O 2 + , Cs+, Ar+ but also ions such as Ga+, Xe+, O-, C m m + and SF 6 + are used to erode the sample surface and the secondary elemental or cluster ions formed from the target atoms by the impact are extracted from the surface by an electric field and then energy and mass analyzed. The ions are then detected by a Faraday cup or electron multiplier and the resulting secondary ion distribution displayed as a function of mass, surface location or depth into the sample (Fig. 5.1).

Keywords

Dioxide Depression Silane Recombination Hydrocarbon 

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© Springer-Verlag Berlin Heidelberg 2003

Authors and Affiliations

  • R. J. MacDonald
  • B. V. King

There are no affiliations available

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