Abstract
The discussion of (4.10.8–11) has shown that a temperature gradient in a conductor yields a concentration gradient ∇ n with the effect of a diffusion current j = −e D n ∇r n, where D n is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of injected carriers in local variations in the type of doping, which is typical for p-n junctions and bipolar transistors.
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Seeger, K. (2002). Carrier Diffusion Processes. In: Semiconductor Physics. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-05025-5_5
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