Light Generation by Semiconductors

  • Karlheinz Seeger
Part of the Advanced Texts in Physics book series (ADTP)

Abstract

Electroluminescent devices emit incoherent visible or infrared light with typical linewidths of about 10 nm while the coherent radiation emitted by the semiconductor laser may have a linewidth as low as 10−2 nm. These devices, together with photovoltaic diodes and solar cells (Sects. 5.8, 9, Chap. 12), are called optoelectronic devices. While the former convert electrical energy into optical radiation, the latter do the inverse process. In this chapter we will consider light-emitting diodes (LED) and diode lasers [13.1].

Keywords

Microwave Sulfide Cadmium Recombination Coherence 

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References

  1. 13.1
    T.S. Moss, G.J. Burrell, B. Ellis, Semiconductor Optoelectronics ( Butter-worth, London 1973 )Google Scholar
  2. 13.2
    J.I. Pankove (ed.), Electroluminescence, Topics Appl. Phys., Vol. 17 ( Springer, Berlin, Heidelberg 1977 )Google Scholar
  3. 13.3
    G. Destriau, J. Chim. Phys. 33, 587 (1936)Google Scholar
  4. 13.4
    L. Canham, Appl. Phys. Lett. 57, 1046 (1990)Google Scholar
  5. 13.5
    P.J. Dean, D.C. Herbert, in Excitons, ed. by K. Cho, Topics Curr. Phys., Vol. 14 (Springer, Berlin, Heidelberg 1979 ) Sect. 3.3.3Google Scholar
  6. 13.6
    W.N. Carr, IEEE Trans. ED-12, 531 (1965)Google Scholar
  7. 13.7
    M. Gershenzon, Bell. Syst. Tech. J. 45, 1599 (1966)Google Scholar
  8. 13.8
    C.H. Henry, P.J. Dean, J.D. Cuthbert, Phys. Rev. 166, 754 (1968)CrossRefGoogle Scholar
  9. 13.9
    D.L. MacAdam, Color Measurement, 2nd edn., Springer Ser. Opt. Sci., Vol. 27 ( Springer, Berlin, Heidelberg 1985 )Google Scholar
  10. 13.10
    R.W. Brander, Mater. Res. Bull. 4, 187 (1969)Google Scholar
  11. 13.11
    A.A. Bergh, P.J. Dean, Proc. IEEE 60, 156 (1972)CrossRefGoogle Scholar
  12. 13.12
    H. Kressel, J.K. Butler, Semiconductor Lasers and Heterojunction LEDs (Academic, New York 1977) (review); C.H. Gooch, Gallium Arsenide Lasers (Wiley, New York 1969); M.H. Pilkuhn, Phys. Status Solidi 25, 9 (1968)CrossRefGoogle Scholar
  13. 13.13
    A Einstein, Phys. Z. 18, 121 (1917); we have, so far, taken induced emission into account for free-carrier absorption, Sect. 11. 10Google Scholar
  14. A.L. Schawlow, Proc. Int’l School of Physics, Vol. XXXI, ed. by P.A. Miles (Academic, New York 1964) p.1Google Scholar
  15. 13.15
    G. Lasher, F. Stern, Phys. Rev. 133, A553 (1964)CrossRefGoogle Scholar
  16. 13.16
    H.S. Sommers Jr., Solid State Electron. 11, 909 (1968)CrossRefGoogle Scholar
  17. 13.17
    J.R. Biard, W.N. Carr, B.S. Reed, Trans. AIME 230, 286 (1964)Google Scholar
  18. 13.18
    M. Pilkuhn, H. Rupprecht, S. Blum, Solid-State Electron. 7, 905 (1964)CrossRefGoogle Scholar
  19. 13.19
    M.H. Pilkuhn, H. Rupprecht, in Radiative Recombination in Semiconductors, ed. by C. Benoit a la Guillaume ( Dunod, Paris 1964 ) p. 195Google Scholar
  20. 13.20
    B. Lax, in Proc. Int’l School of Physics, Vol. 31, ed. by P.A. Miles ( Aca- demic, New York 1964 ) p. 17Google Scholar
  21. 13.21
    F.L. Galeener, G.B. Wright, W.E. Krag, T.M. Quist, H.J. Zeiger, Phys. Rev. Lett. 10, 472 (1962)CrossRefGoogle Scholar
  22. 13.22
    I. Meingailis, Bull. Am. Phys. Soc. 8, 202 (1963)Google Scholar
  23. 13.23
    J. Feinleib, S. Groves, W. Paul, R. Zallen, Phys. Rev. 131, 2070 (1963)CrossRefGoogle Scholar
  24. 13.24
    J.A. Armstrong, M.I. Nathan, A.W. Smith, Appl. Phys. Lett. 3, 68 (1963)CrossRefGoogle Scholar
  25. 13.25
    I. Hayashi, M.B. Panish, J. Appl. Phys. 41, 150 and 3195 (1950); H.C. Casey, Jr., M.B. Panish, Heterostructure Lasers ( Academic, New York 1978 )Google Scholar
  26. 13.26
    J.J. Hsieh, Appl. Phys. Lett. 28, 283 (1976)Google Scholar
  27. 13.27
    C.J. Nuese, G. Olsen, Appl. Phys. Lett. 26, 528 (1975)CrossRefGoogle Scholar
  28. 13.28
    R.E. Nahory, M.A. Pollak, E.D. Beebe, J.C. De Winter, R.W. Dixon, Appl. Phys. Lett. 28, 19 (1976)CrossRefGoogle Scholar
  29. 13.29
    H. Kressel, in Handbook on Semiconductors, Vol. 4, ed. by C. Hilsum ( North-Holland, Amsterdam 1981 ) p. 617Google Scholar
  30. 13.30
    A.V. Nurmikko, R.L. Gunshor, In Proc. 22nd Int’l Conf. Phys. Semicond., Vancouver (1994) p.27, ed. by D.J. Lockwood ( World Scientific, Singapore 1995 )Google Scholar
  31. 13.31
    D.J. Olego, Europhys. News 26, 112 (1995)Google Scholar
  32. 13.32
    H. Amano, M. Kito, K. Hiramatsu, I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1998)CrossRefGoogle Scholar
  33. 13.33
    S. Nakamura, G. Fasol, The Blue Laser Diode, GaN based Light Emitters and Lasers (Springer-Verlag, Berlin, Heidelberg 1997 )Google Scholar
  34. 13.34
    H. Morkog, S. Srite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burus, J. Appl. Phys. 76, 1363 (1994)CrossRefGoogle Scholar
  35. 13.35
    S. Nakamura, Y. Harada, M. Seno, Appl. Phys. Lett. 58, 20 - 21 (1991)CrossRefGoogle Scholar
  36. 13.36
    T. Mukai, K. Takegawa, S. Nakamura, Jpn. J. Appl. Phys. 37, L 839 (1998)Google Scholar
  37. 13.37
    S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, K. Chocho, Jpn. J. Appl. Phys. 37, L 627 (1998)Google Scholar
  38. 13.38
    T. Mukai, H. Narimatsu, S. Nakamura, Jpn. J. Appl. Phys. 37, L 479 (1998)Google Scholar
  39. 13.39
    S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Mukai, Jpn. J. Appl. Phys. 34, L 1332 (1995)Google Scholar
  40. 13.40
    J. Baur, P. Schiotter, J. Schneider,Festkörperprobleme/ Advances in Solid State Physics, Vol. 37, ed. by R. Helbig ( Vieweg, Wiesbaden 1997 ) p. 67Google Scholar
  41. 13.41
    T.C. Harman, in The Physics of Semimetals and Narrow-Gap Semiconduc- tors, ed. by D.L. Carter, R.T. Bate ( Pergamon, Oxford 1971 ) p. 363Google Scholar
  42. 13.42
    J.P. Donnelly, A.R. Calawa, T.C. Harman, A.G. Foyt, W.T. Lindley, Solid- State Electron. 15, 403 (1972)CrossRefGoogle Scholar
  43. 13.43
    C.K.N. Patel, E.D. Shaw, Phys. Rev. Lett. 24, 451 (1970)CrossRefGoogle Scholar
  44. 13.44
    C.K.N. Patel, E.D. Shaw, R.J. Kerl, Phys. Rev. Lett. 25, 8 (1970)CrossRefGoogle Scholar
  45. 13.45
    Y. Yafet, Phys. Rev. 152, 858 (1966)CrossRefGoogle Scholar
  46. 13.46
    P.A. Wolff, Phys. Rev. Lett. 16, 225 (1966); IEEE J. QE-2, 659 (1966)Google Scholar
  47. 13.47
    F. Agullò - Rueda, E.E. Mendez, J.M. Hong, Phys. Rev. B 40, 1357 (1989)CrossRefGoogle Scholar
  48. 13.48
    E.E. Mendez, G. Bastard, Physics Today, June 1993, p. 34Google Scholar
  49. 13.49
    C. Waschke, H.G. Roskos, R. Schwedler, K. Leo, H. Kurz, Phys. Rev. Lett. 70, 3319 (1993)CrossRefGoogle Scholar
  50. 13.50
    H.G. Roskos, C. Nuss, J. Shah, K. Leo, D.A.B. Miller, A.M. Fox, S SchmittRink, K. Köhler, Phys. Rev. Lett. 68, 2216 (1992)CrossRefGoogle Scholar
  51. 13.51
    F. Beltram, F. Capasso, D.L. Sivco, A.L. Hutchinson, S.N.G. Chu, A.Y. Cho, Phys. Rev. Lett. 64, 3167 (1990)CrossRefGoogle Scholar
  52. 13.52
    G. Bastard, A. Brum, R. Ferreira, Solid State Physics, Vol. 44, ed. by H. Ehrenreich, D. Turnbull ( Academic, New York 1991 ) p. 229Google Scholar
  53. 13.53
    T. Yajima, Y. Taira, J. Phys. Soc. Jpn. 47, 1620 (1979)CrossRefGoogle Scholar
  54. 13.54
    G. Valusis, V.G. Lyssenko, D. Klatt, F. Löser, K.H. Pantke, K. Leo, K. Köhler, 23rd Int’l Conf. Phys. Semicond. Vol. 3, ed. by M. Schaller, R. Zimmermann ( World Scientific, Singapore 1996 ) p. 1783Google Scholar
  55. 13.55
    W. Rehm, H. Künzel, G.H. Döhler, K. Ploog, P. Ruden, Physica 117B,and 118B, 732 (1983)Google Scholar
  56. 13.56
    B. Abeles, T. Tiedje, Phys. Rev. Lett. 51, 2003 (1983)Google Scholar
  57. 13.57
    J.D. Joannopoulos, G. Lucovsky (eds.), The Physics of Hydrogenated Amorphous Silicon I and II, Topics Appl. Phys., Vols. 55 and 56 ( Springer, Berlin, Heidelberg 1984 )Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.ViennaAustria
  2. 2.Institut für MaterialphysikUniversitätViennaAustria

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