Abstract
The last decade has witnessed considerable progress in the fabrication of low-dimensional semiconductor systems. In these systems, the carriers are confined in small regions formed by potential barriers. The spatial sizes of the confinement are comparable to the carrier de Broglie wavelengths or the exciton Bohr radii so that the quantization of their energy levels results. Experimentally, many novel features of the electronic and optical properties have been discovered in these systems [1,2]. Recent developments in crystal growth techniques have made semiconductors even more versatile. Following the success of semiconductor quantum wells, which permitted the study of two-dimensional (2D) optical and electronic effects of carriers due to lateral confinement, many investigations have been carried out in quasi-one-dimensional quantum wires and zero-dimensional (OD) quantum dots (QDs). Especially, in semiconductor QDs, since excitons are confined in all spatial directions on a length scale comparable to the exciton Bohr radius, many interesting phenomena are expected, such as a large blueshift of the band gap energy, discrete energy structure, σ-function-like density of states, and high optical nonlinearity [2–4]. These characteristic properties of semiconductor QDs have attracted an enormous amount of interest for opto-electronic device applications. From the viewpoint of fundamental physics, understanding the nature of excitons in terms of the dimensionality is an important subject.
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Sugisaki, M. (2002). Micro-Imaging and Single Dot Spectroscopy of Self-Assembled Quantum Dots. In: Masumoto, Y., Takagahara, T. (eds) Semiconductor Quantum Dots. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-05001-9_4
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