Abstract
In quantum nanostructures like quantum wires or quantum dots, where electrons are two- or three-dimensionally confined into nanometer-scale semiconductor structures, novel physical properties are expected to emerge. These expected novel properties will give rise to new semiconductor devices as well as to drastically improved device performance [1]. Optical and electrical devices with quantum dots (QDs) have already been proposed; improvements in device performance by the use of QDs have been partially proven. In this section, the origins of those improvements is studied from the viewpoint of physical property changes in the QD structure, and device performances are summarized.
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Nishi, K. (2002). Device Applications of Quantum Dots. In: Masumoto, Y., Takagahara, T. (eds) Semiconductor Quantum Dots. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-05001-9_12
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DOI: https://doi.org/10.1007/978-3-662-05001-9_12
Publisher Name: Springer, Berlin, Heidelberg
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