Abstract
The amount of radiation that semiconductor devices and materials encounter during their lifecycle strongly depends on the radiation environment and their operating conditions. For space missions and military applications it is obvious that there is a radiation-harsh environment. However, also during their fabrication process and even for standard terrestrial operation the devices may suffer from ionising radiation. Therefore, Sect. 1.2 briefly reviews the different radiation environments and points out the typical particle spectrum that the devices will face. Only some essential features are addressed as whenever needed more details are given in the different chapters. Another important aspect is the trend to use more and more the Custom-Off-The-Shelf (COTS) approach for designing systems to be used in satellite and space programs. This COTS approach, which to some extent was the driving force for writing this book, is treated in Sect. 1.3, dealing with the component selection strategy.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Holmes-Siedle A, Adams L (1993) Handbook of radiation effects. Oxford University Press, Oxford
Barth JL (1997) Modeling space radiation environments. Proc 1997 NSREC Short Course, Snowmass
Van Allen JA (1963) Geomagneticically trapped radiation. Space science, John Wiley & Sons, New York
Stassinopoulos EG, Brucker GJ, Nakamura DW, Stauffer CA, Gee GB, Barth JL (1996) Solar flare proton evaluation at geostationary orbits for engineering applications. IEEE Trans Nucl Sci 43: 369–382
Daly EJ, Lemaire J, Heynderickx D, Rodgers DJ (1996) Problems with models of the radiation belts. IEEE Trans Nucl Sci 43: 403–415
Dyer CS, Sims AJ, Truscott PR, Farren J, Unterwood C (1992) Radiation environments on shuttle missions using the CREA experiment. IEEE Trans Nucl Sci 39: 1809–1816
Gussenhoven MS, Mullen EG, Brautigam DH (1996) Improved understanding of the earth’s radiation belts form the CRRES satellite. IEEE Trans Nucl Sci 43: 353–368
Huston L, Pfitzer KA (1998) A new model for the low altitude trapped proton environment. IEEE Trans Nucl Sci 4: 2972–2978
Dyer CS, Truscott PR, Sanderson C, Watson C, Peerless CL, Knight P, Mugford R, Cousins T, Noulty R (2000) Radiation environment measurements from CREAM and CREDO during the approach of solar maximum. IEEE Trans Nucl Sci 47: 2208–2217
Chennete DL, Chen J, Clayton E, Guzik TG, Wefel JP, Garcia-Munoz M, Lapote C, Ray KP, Mullen EG, Hardy DA (1994) The CRRESS/SPACERAD heavy ion model of the environment ( CHIME) for cosmic rays and solar particle effects on electronic and biological systems in space. IEEE Trans Nucl Si 41: 2332–2339
McKerracher PL, Kinnison JD, Maurer RH (1994) Applying new solar flare particle event models to interplanetary satellite programs. IEEE Trans Nucl Sci 41: 2368–2375
LaBel KA, Marshall PW, Barth JL, Stassinopoulos EG, Seidleck CM, Dale CJ (1996) Commercial microelectronics technologies for applications in the satellite radiation environment. In Proc 1996 IEEE Aerospace Applications, The IEEE, New York, pp 375–390
Landis GA, Appelbaum J (1990) Design considerations for Mars PV power systems. In Proc 214 IEEE Photovoltaic Specialists Conf. The IEEE, New York, pp 1623–1270
Appelbaum J, Segalov T, Jenkins P, Landis GA, Baraona C (1997) Verification of Mars solar radiation model based on Mars Pathfinder data. In: Proc 26s IEEE Photovoltaic Specialists Conf, The IEEE, New York, pp 1039–1042
Hon. P, Lutz G, Richter RH, Struder L, Longoni A, Sampieto M (2000) In:Proc of the 8th European symposium on semiconductor detectors. Nucl Instr & Methods in Phys Res A 439:199–685
Baumann RC, Smith EB (2000) Neutron-induced boron fission as a major source of soft errors in deep submicron SRAM devices. In: Proc Int Rel Phys Symp, The IEEE, New York, pp 152–157
May TC, Woods MH (1979) Alpha-particle-induced soft errors in dynamic memories. IEEE Trans Electron Devices 26: 2–9
Hsieh CM, Murley PC, O’Brien RR (1991) A field funneling effect on the collection of the alpha-particle-generated carriers in silicon devices. IEEE Electron Device Lett 2: 103–105
Hasnain Z, Ditali A (1992) Building-in reliability: Soft errors— a case study. In: Proc Int Rel Phys Symp, The IEEE, New York, pp 276–280
Baumann R, Hossain T, Murata S, Kitagawa H (1995) Boron compounds as a dominant source of alpha particles in semiconductor devices. In: Proc Int Rel Phys Symp, The IEEE, New York, pp 297–302
Normand E, Baker TJ (1993) Altitude and latitude variations in avionics SEU and atmospheric neutron fluxes. IEEE Trans Nucl Sci 40: 1484–1490
Takia M, Kishimoto T, Ohno Y, Sayama H, Sonoda K, Satoh S, Nishimura T, Miyoshi H, Kinomura A, Horino Y, Fujii K (1996) Soft error susceptibility and immune structures in dynamic random access memories (DRAMs) investigated by nuclear microprobes. IEEE Trans Nucl Sci 43: 696–704
Takia M, Arita Y, Abo S, Iwamatsu T, Maegawa S, Sayama H, Yamaguchi Y, Inuishi M, Nishimura T (2001) Evaluation of soft errors in DRAM and SRAM using nuclear microprobe and neutron source. In: Ryssel H, Wachutka G, Grunbacher H (eds) Proc ESSDERC 2001, Editions Frontieres, Paris, pp 17–24
Wolf S, Tauber RN (2000) Silicon processing for the VLSI era. Lattice press. California
Underwood CI, Oldfield MK (2000) Observations on the reliability of COTS-devicebased solid state data recorders operating in low-earth-orbit IEEE Trans Nucl Sci 47: 647–653
O’Bryan MV, Label KA, Reed RA, Howard Jr JW, Ladbury RL, Barth JL, Kniffin SD, Seidleck CM, Marshall PW, Marshal CJ, Kim HS, Hawkins DK, Sanders AB, Carts MA, Forney JD, Roth DR, Kinnison JD, Nhan E, Sahu K (2000) Radiation damage and single event results for candidate spacecraft electronics. In: Proc Rad Effects Data Workshop, The IEEE, New York, pp 106–122
LaBel KA, Barnes CE, Marshall PW, Marshall CJ, Johnston AH, Reed RA, Barth JL, Seidleck CM, Kayali SA, O’Bryan MV (2000) A roadmap for NASA’s radiation effect research in emerging microelectronics and photonics. In: Proc IEEE Aerospace Conf, The IEEE, New York, pp 535–545
www.estec.esa.nl/qcswww/tos_qca/
International Technology Roadmap for Semiconductors, 2001 Edition. www.itrs.net/2001_SIA_Roadmap/Home.html
Anelli G, Campbell M, Delmastro M, Faccio F, Florian S, Giraldo A, Heyne E, Jarron P, Kloukinas K, Marchioro A, Moreira P, Snoeys W (1999) Radiation-tolerant VLSI circuits in standard deep sub micron CMOS technologies for the LHC experiment: Practical design aspects. IEEE Trans Nucl Sci 46: 1690–169
Lacoe RC, Osborn JV, Koga R, Brown S, Mayer DC (2000) Application of hardnessby-design methodologies to radiation-tolerant ASIC technologies IEEE Trans Nucl Sci 47: 2334–2341
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2002 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Claeys, C., Simoen, E. (2002). Radiation Environments and Component Selection Strategy. In: Radiation Effects in Advanced Semiconductor Materials and Devices. Springer Series in Materials Science, vol 57. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04974-7_1
Download citation
DOI: https://doi.org/10.1007/978-3-662-04974-7_1
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-07778-4
Online ISBN: 978-3-662-04974-7
eBook Packages: Springer Book Archive