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Experimental Data on P-T-X Phase Diagrams and Non-stoichiometry

  • Jacob H. Greenberg
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 44)

Abstract

II–VI semiconductor compounds are used for infrared, X-ray and γ-ray detection, in thin film solar cells, photo-refractive and blue/UV emission devices [118]. CdTe and Cd–Zn telluride, used as detectors for direct transformation of high-energy radiation to electrical signals, create a new generation of efficient detectors for medical applications, such as tomography. CdZnTe is used as a buffer layer in heteroepitaxy of mercury-cadmium telluride and as a substrate for epitaxial technology of (Hg,Cd)Te, the most important semiconductor material for infrared detector applications [119]. The next generation of infrared detection devices demands further improvement in material technology. These applications require high-quality multilayer heteroepitaxial structures with buffer layers serving to overcome the adverse effects of lattice mismatch, in particular, between Si or GaAs substrates and the active II–VI layer [120]. The lattice constant of (Cd,Zn)Te can be adjusted by changing the content of ZnTe to match the lattice of the (Hg,Cd)Te epilayer [121]. Some of the applications of II–VI bulk single crystals, according to P.Rudolph [122], are presented in Table 2.

Keywords

Vapor Pressure Congruent Melting Semiconductor System Congruent Melting Point Vapor Pressure Curve 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2002

Authors and Affiliations

  • Jacob H. Greenberg
    • 1
  1. 1.Department of Inorganic and Analytical ChemistryThe Hebrew University of JerusalemJerusalemIsrael

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