Abstract
A first-order model of electron transport in silicon dioxide has been worked out in the frame of the spherical-harmonics expansion (SHE) method applied to the solution of the Boltzmann transport equation (BTE). The scattering rates for each collision process have been analyzed and a number of transport properties of electrons in bulk SiO2 have been worked out. Moreover, a new model has been introduced into the SHE code to calculate the microscopic fluxes at the silicon interface, based on the thermionic emission theory. The information given by the high-energy tail of the distribution function above the energy barrier at the interface and within the SiO2 allows to accurately analyze the electron injection into the gate oxide.
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Reggiani, S., Marsella, M., Gnudi, A., Rudan, M. (2002). Carrier Transport in Silicon Dioxide using the Spherical-Harmonics Expansion of the BTE. In: Anile, A.M., Capasso, V., Greco, A. (eds) Progress in Industrial Mathematics at ECMI 2000. Mathematics in Industry, vol 1. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04784-2_25
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DOI: https://doi.org/10.1007/978-3-662-04784-2_25
Publisher Name: Springer, Berlin, Heidelberg
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