Abstract
Monte Carlo simulations are used to check the consistency of an Extended Hydrodynamic model describing charge transport in bulk silicon.
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References
Jacoboni C. and Reggiani L. (1983), Rev. Modern Phys., 55, 654–686
Müller,I. and Ruggeri,T. (1993), Extended Thermodynamics, Springer-Verlag, Berlin.
Levermore C.D. (1996), J. Stat. Phys., 83, 331–407
Anile A.M. and Muscato O. (1995), Phys. Rev. B, 51, 16728–16740
Anile A.M. and Romano V. (1999), Cont. Mech. and Thermodynamics, 11, 307–325
Romano V. (2000), Cont. Mech. and Thermodynamics, 12, 31–42
Markowich P.A., Ringhofer C. and Schmeiser C. (1991), Semiconductor equations,Springer-Verlag,New York (NY).
Muscato O. (2000), COMPEL, 19, 812–828
W. Fawcett,A.D. Boardman and S. Swain, J. Phys. Chem. Solid, 31, 1963, (1970)
S.E. Laux, M.V. Fischetti and D.J. Frank,“Monte Carlo analysis of semiconductor devices: the DAMOCLES program”, IBM J. Res. Develop., 34, (1990)
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Muscato, O. (2002). Monte Carlo Verification of an Extended Hydrodynamic Model Describing Charge Carrier Transport in Semiconductors. In: Anile, A.M., Capasso, V., Greco, A. (eds) Progress in Industrial Mathematics at ECMI 2000. Mathematics in Industry, vol 1. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04784-2_23
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DOI: https://doi.org/10.1007/978-3-662-04784-2_23
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