Abstract
Early magnetic random access memory used the natural hysteresis of magnetic materials to store data by using two or more sets of current•carrying wires or straps. Magnetic elements were arrayed so that only those which were to be written to received a combination of magnetic fields above a write threshold, while the other elements in the array did not change storage state. Most of today’s MRAM concepts still use this technique.
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Hirota, E., Sakakima, H., Inomata, K. (2002). Magnetic Random Access Memory (MRAM). In: Giant Magneto-Resistance Devices. Springer Series in Surface Sciences, vol 40. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04777-4_6
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DOI: https://doi.org/10.1007/978-3-662-04777-4_6
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