Abstract
Correlated Transitions near the Band Edge
Let us now discuss the modifications of the optical Bloch equations (see Chap. 4) due to the Coulomb interaction among carriers. If optical transitions take place in the vicinity of the Γ point of the Brillouin zone, we can assert that the effective-mass approximation is valid, which allows us to analyze optical transitions in a small part of the Brillouin zone with very high accuracy. In real space, this implies that we ignore the lattice structure of the semiconductor and consider a scale which is large in comparison with one lattice constant.
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© 2002 Springer-Verlag Berlin Heidelberg
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Schäfer, W., Wegener, M. (2002). Correlated Transitions near the Band Edge. In: Semiconductor Optics and Transport Phenomena. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04663-0_6
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DOI: https://doi.org/10.1007/978-3-662-04663-0_6
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-08271-9
Online ISBN: 978-3-662-04663-0
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