Oxidation of Silicon and III–V Compound Semiconductors
The oxidation of silicon has been thoroughly investigated since silicon dioxide plays a most important role in silicon devices. Besides the extremely high stability, low diffusion coefficients for specific dopants in SiO2, a high dielectric strength in the bulk of SiO2 films, and a low density of interface states at SiO2/Si interfaces are essential in devices such as, for example, metal-oxide-silicon field-effect transistors. Unfortunately, native oxides of III–V compound semiconductors possess none of these favorable properties.
KeywordsOxygen Uptake Compound Semiconductor Dissociative Chemisorption Formal Oxidation State Arsenic Oxide
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