Oxidation of Silicon and III–V Compound Semiconductors

  • Winfried Mönch
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 26)


The oxidation of silicon has been thoroughly investigated since silicon dioxide plays a most important role in silicon devices. Besides the extremely high stability, low diffusion coefficients for specific dopants in SiO2, a high dielectric strength in the bulk of SiO2 films, and a low density of interface states at SiO2/Si interfaces are essential in devices such as, for example, metal-oxide-silicon field-effect transistors. Unfortunately, native oxides of III–V compound semiconductors possess none of these favorable properties.


Oxygen Uptake Compound Semiconductor Dissociative Chemisorption Formal Oxidation State Arsenic Oxide 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2001

Authors and Affiliations

  • Winfried Mönch
    • 1
  1. 1.Laboratorium für FestkörperphysikGerhard-Mercator-Universität DuisburgDuisburgGermany

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