Abstract
The outer s-electrons of group-V atoms are tightly bound so that only their p-electrons are involved in chemical bonds with substrate atoms on semiconductor surfaces. In that group-V adatoms behave similar to trivalent group-Ill adsorbates. On Si- and Ge(111) surfaces group-V atoms substitute for the topmost layer of substrate atoms while they form dimers on {100} surfaces of these elemental semiconductors.
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© 2001 Springer-Verlag Berlin Heidelberg
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Mönch, W. (2001). Group-V Adatoms. In: Semiconductor Surfaces and Interfaces. Springer Series in Surface Sciences, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04459-9_16
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DOI: https://doi.org/10.1007/978-3-662-04459-9_16
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-08748-6
Online ISBN: 978-3-662-04459-9
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