Advertisement

Space-Charge Layers at Semiconductor Interfaces

  • Hans Lüth
Part of the Advanced Texts in Physics book series (ADTP)

Abstract

If one puts a positive point charge into a locally neutral electron plasma (electrons on the background of fixed positive cores), the electrons in the neighborhood will rearrange to compensate that additional charge; they will screen it, such that far away from the charge the electric field vanishes. The higher the electron density, the shorter the range over which electrons have to rearrange in order to establish an effective shielding. In metals with free-electron concentrations of about 1022 cm−3 the screening length is short, on the order of atomic distances. On the other hand, in semiconductors the free-carrier concentrations are usually much lower, on the order of 1017 cm−3 may be, and we thus expect much larger screening lengths, of the order of hundreds of Ångstroms. These spatial regions of redistributed screening charges are called space charge regions.

Keywords

Fermi Level Surface State Space Charge Landau Level Depletion Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. XII.1
    H. Lüuth: Appl. Phys. 8, 1 (1975) H. Kuzmany: Festküorperspektroskopie (Springer, Berlin, Heidelberg 1990 )Google Scholar
  2. XII.2
    G.W. Rubloff, J. Anderson, M.A. Passler, P.J. Stiles: Phys. Rev. Lett. 32, 667 (1973)CrossRefGoogle Scholar
  3. XII.3
    J.D.E. McIntyre, D.A. Aspnes: Surf. Sci. 24, 417 (1971)CrossRefGoogle Scholar
  4. XII.4
    H.J. Krebs, H. Lüuth: Proc. Int’I Conf. on Vibrations in Adsorbed layers, Jüulich 1978; KFA Reports, Jüul. Conf. 26, 135 (1978)Google Scholar
  5. XII.5
    R.G. Greenler: J. Chem. Phys. 44, 310 (1966); J. Chem. Phys. 50, 1963 (1969)CrossRefGoogle Scholar
  6. XII.6
    H. Moritz, H. Lüuth: Vacuum (GB) 41, 63 (1990)H. Moritz: Wechselwirkungen im Koadsorbatsystem CO/Acetonotril auf Pt(111): Eine IRAS-Untersuchung. Diploma Thesis, RWTH Aachen (1989)Google Scholar
  7. XII.7
    H.T. Krebs, H. Lüuth: Appl. Phys. 14, 337 (1977)CrossRefGoogle Scholar
  8. XII.8
    B.E. Hayden, A.M. Bradshaw: Surf. Sci. 125, 787 (1983)CrossRefGoogle Scholar
  9. XII.9
    G. Chiarotti, S. Nannarone, R. Pastore, P. Chiaradia: Phys. Rev. B 4, 3398 (1971)CrossRefGoogle Scholar
  10. XII.10
    Y.J. Chabal: Surf. Sci. Rep. 8, 211 (1988)CrossRefGoogle Scholar
  11. XII.11
    N. Marshall, B. Fischer: Phys. Rev. Lett. 28, 811 (1972)CrossRefGoogle Scholar
  12. XII.12
    R.M.A. Azzam, N.M. Bashara: Ellipsometry and Polarized Light ( North-Holland, Amsterdam 1977 )Google Scholar
  13. XII.13
    H. Lüuth: J. Physique 38, C5–115 (1977)CrossRefGoogle Scholar
  14. XII.14
    F. Steinrisser, R.E. Hetrick: Rev. Sci. Instrum. 42, 304 (1971)CrossRefGoogle Scholar
  15. XII.15
    S.M. Ryvkin: Photoelectric Effects in Semiconductors ( Consultants Bureau, New York 1964 )Google Scholar
  16. XII.16
    W. Müuller, W. Mönch: Phys. Rev. Lett. 27, 250 (1971)CrossRefGoogle Scholar
  17. XII.17
    M. Büuchel, H. Lüuth: Surf. Sci. 50, 451 (1975)CrossRefGoogle Scholar
  18. 7.1
    H. Ibach, H. Lüuth: Solid-State Physics, 2nd edn. ( Springer, Berlin, Heidelberg 1996 )Google Scholar
  19. 7.2
    A. Many, Y. Goldstein, N.B. Grover: Semiconductor Surfaces (North Holland, Amsterdam 1965 )Google Scholar
  20. 7.3
    H. Lüuth, M. Büchel, R. Dorn, M. Liehr, R. Matz: Phys. Rev. B 15, 865 (1977)CrossRefGoogle Scholar
  21. 7.4
    E. Veuhoff, C.D. Kohl: J. Phys. C: Solid State Phys. 14, 2395 (1981)CrossRefGoogle Scholar
  22. 7.5
    T. Ando, A.B. Fowler, F. Stern: Electronic properties of two-dimensional systems. Rev. Mod. Phys. 54, 437 ( AIP, New York 1982 )Google Scholar
  23. 7.6
    F.J. Allen, G.W. Gobeli: Phys. Rev. 127, 152 (1962)CrossRefGoogle Scholar
  24. 7.7
    K.C. Pandey: Phys. Rev. Lett. 47, 1913 (1981)CrossRefGoogle Scholar
  25. 7.8
    M. Henzler: Phys. Status Solidi 19, 833 (1967) W. Mönch: Phys. Status Solidi 40, 257 (1970)CrossRefGoogle Scholar
  26. 7.9
    J. von Wienskowski, W. Mönch: Phys. Status Solidi B 45, 583 (1971) G.W. Gobeli, F.G. Allen: Surf. Sci. 2, 402 (1964)Google Scholar
  27. 7.10
    F. Himpsel, D.E. Eastman: J. Vac. Sci. Technol. 16, 1287 (1979) W. Mönch, P. Koke, S. Krüger: J. Vac. Sci. Technol. 19, 313 (1981)CrossRefGoogle Scholar
  28. 7.11
    Private communication by H. Wagner (ISI, Research Center Jülich, 1988 )Google Scholar
  29. 7.12
    J.M. Nicholls, B. Reihl: Phys. Rev. B 36, 8071 (1987) F.J. Himpsel, D.E. Eastman, P. Heimann, B. Reihl, C.W. White, D.M. Zehner: Phys. Rev. B 24, 1120 (1981) P. Mârtensson, W. Ni, G. Hansson, J.M. Nicholls, B. Reihl: Phys. Rev. B 36, 5974 (1987)CrossRefGoogle Scholar
  30. 7.13
    P. Balk (ed.): The Si-SiO2 System, in Materials Science Monographs 32 ( Elsevier, Amsterdam 1988 )Google Scholar
  31. 7.14
    H. Ibach, H.D. Bruchmann, H. Wagner: Appl. Phys. A 29, 113 (1982)CrossRefGoogle Scholar
  32. 7.15
    M.H. White, J.R. Cricchi: Characterization of Thin Oxide MNOS Memory Transistors, IEEE Trans. ED-19, 1280 (1972)Google Scholar
  33. 7.16
    F.J. Grunthaner, P.J. Grunthaner, R.P. Vasquez, B.F. Lewis, J. Maserjian, A. Madhukar: J. Vac. Sci. Technol. 16, 1443 (1979)CrossRefGoogle Scholar
  34. 7.17
    F.J. Grunthaner, B.F. Lewis, J. Maserjian: J. Vac. Sci. Techol. 20, 747 (1982) 7.18 S.P. Svensson, J. Kanski, T.G. Andersson, P.-O. Nilsson: J. Vac. Sci. Technol. B 2, 235 (1984)Google Scholar
  35. 7.19
    A. Förster, H. Lüuth: Surf. Sci. 189/190, 307 (1987)Google Scholar
  36. 7.20
    K. Smit, L. Koenders, W. Mönch: J. Vac. Sci. Technol. B 7, 888 (1989) 7.21 H. Moormann, D. Kohl, G. Heiland: Surf. Sci. 80, 261 (1979)Google Scholar
  37. 7.22
    G. Heiland: Adsorption on oxides, in The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, Vol. 3, ed. by D.A. King, D.P. Woodruff ( Elsevier, Amsterdam 1984 ) p. 137Google Scholar
  38. 7.23
    G. Heiland, P. Kunstmann: Surf. Sci. 13, 72 (1969)CrossRefGoogle Scholar
  39. 7.24
    D. Kahng, M.M. Atalla: Silicon-Silicon Dioxide Field Induced Surface Devices, IRE Solid State Device Res. Conf., Carnegie Institute of Technology, Pittsburgh, Pa., 1960 D. Kahng: A Historical Perspective on the Development of MOS Transistors and Related Devices, IEEE Trans. ED-23, 655 (1976)Google Scholar
  40. 7.25
    H.C. Pao, C.T. Sah: “Effects of diffusion current on characteristics of metaloxide (insulator) semiconductor transistors (MOST)”, Solid State Electron. 9, 927 (1966)CrossRefGoogle Scholar
  41. 7.26
    S.M. Sze: Physics of Semiconductor Devices, 2nd edn. ( Wiley, New York 1981 ) p. 431Google Scholar
  42. 7.27
    A. Kamgar, P. Kneschaurek, G. Dorda, J.F. Koch: Phys. Rev. Lett. 32, 1251 (1974)CrossRefGoogle Scholar
  43. 7.28
    A.B. Fowler, F.F. Fang, W.E. Howard, P.J. Stiles: Phys. Rev. Lett. 16, 901 (1966)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2001

Authors and Affiliations

  • Hans Lüth
    • 1
    • 2
  1. 1.Forschungszentrum Jülich GmbHInstitut für Schichten und GrenzflächenJülichGermany
  2. 2.Rheinisch-Westfälische Technische HochschuleAachenGermany

Personalised recommendations