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Capacitance—Voltage Data: C(V)

  • James F. Scott
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 3)

Abstract

In a ferroelectric thin film the capacitance depends strongly upon voltage. Expressed in terms of electric field E this voltage dependence arises from two unrelated sources. The first is the nonlinear dependence of dielectric constant upon field ε(E). The second is the field dependence of the width d(E) over which most of the voltage drop occurs. The general form is
$$C(E) = \frac{{\varepsilon (E)}}{{d(E)}} $$
(5.1)
.

Keywords

Schottky Barrier Schottky Barrier Height Strontium Titanate Ferroelectric Thin Film Space Charge Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2000

Authors and Affiliations

  • James F. Scott
    • 1
  1. 1.Centre for Ferroics, Earth Sciences Dept.Cambridge UniversityCambridgeEngland

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