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Leakage Currents

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Ferroelectric Memories

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 3))

Abstract

It is important to understand the nature of leakage currents in ferroelectric memories in order to control heating of the memory and thermal breakdown. In general, ferroelectric film capacitors on metal electrodes provide very complicated structures in which electrons, holes, and ions all contribute to conduction, and where a variety of mechanisms — including surface-limited processes such as thermionic Schottky currents and quantum mechanical Fowler—Nordheim currents, as well as bulk-limited processes such as Poole— Frenkel and Space-Charge-Limited Currents (SCLC) are all important. Typically these processes are all present at the same time, and unfortunately they are not additive; rather, they result in nonlinear integral equations for total leakage current J(V). In this book we will use the J to denote real leakage current and the letter i to designate displacement current.

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  1. Centre for Ferroics, Earth Sciences Dept., Cambridge University, Downing Street, Cambridge, CB2 3EQ, England

    Professor James F. Scott

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  1. Professor James F. Scott
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Scott, J.F. (2000). Leakage Currents. In: Ferroelectric Memories. Springer Series in Advanced Microelectronics, vol 3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04307-3_4

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  • DOI: https://doi.org/10.1007/978-3-662-04307-3_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-08565-9

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