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Electrical Breakdown (DRAMs and NV-RAMs)

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Ferroelectric Memories

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 3))

Abstract

Many aspects of the design engineering, materials processing and selection, and applied physics (e.g., switching kinetics) are unrelated in ferroelectric applications to nonvolatile RAMs compared with DRAMs. In the ferroelectric NV-RAM the ferroelectric polarization contains the stored information whereas in a ferroelectric DRAM, the ferroelectric film is merely a highdielectric capacitor and can have P r = 0. However, some issues are the same, and this chapter deals with one of them, electrical breakdown, which is paramount for NV-RAMs, DRAMs, and other integrated ferroelectric devices such as bypass capacitors, which are not memories.

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Authors and Affiliations

  1. Centre for Ferroics, Earth Sciences Dept., Cambridge University, Downing Street, Cambridge, CB2 3EQ, England

    Professor James F. Scott

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  1. Professor James F. Scott
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© 2000 Springer-Verlag Berlin Heidelberg

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Scott, J.F. (2000). Electrical Breakdown (DRAMs and NV-RAMs). In: Ferroelectric Memories. Springer Series in Advanced Microelectronics, vol 3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04307-3_3

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  • DOI: https://doi.org/10.1007/978-3-662-04307-3_3

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-08565-9

  • Online ISBN: 978-3-662-04307-3

  • eBook Packages: Springer Book Archive

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