Electrical Breakdown (DRAMs and NV-RAMs)

  • James F. Scott
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 3)


Many aspects of the design engineering, materials processing and selection, and applied physics (e.g., switching kinetics) are unrelated in ferroelectric applications to nonvolatile RAMs compared with DRAMs. In the ferroelectric NV-RAM the ferroelectric polarization contains the stored information whereas in a ferroelectric DRAM, the ferroelectric film is merely a highdielectric capacitor and can have P r = 0. However, some issues are the same, and this chapter deals with one of them, electrical breakdown, which is paramount for NV-RAMs, DRAMs, and other integrated ferroelectric devices such as bypass capacitors, which are not memories.


Ramp Rate Electrical Breakdown Schottky Barrier Height Strontium Titanate Remanent Polarization 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2000

Authors and Affiliations

  • James F. Scott
    • 1
  1. 1.Centre for Ferroics, Earth Sciences Dept.Cambridge UniversityCambridgeEngland

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