The best nanoscale ferroelectric thin-film arrays to be produced thus far are by Alexe . As shown in Fig. 17.1, these e-beam arrays of SBT are 100 nm on a side and switch very well. They are about 100 times smaller than those reported elsewhere . These arrays were fabricated with minimum lateral sizes less than 100 nm by using Electron Beam Direct Writing (EBDW); such maskless direct writing eliminates the need for submicron etching. It is useful for metallic and oxide nanostructures. Chemical reactions are induced locally in a metal—organic thin film by irradiation with an e-beam. The resulting pattern is developed by dissolving the unexposed area in a specific solvent and fixed by thermal annealing.
KeywordsRapid Thermal Annealing Bismuth Oxide Fringe Field Bismuth Titanate Good Electrical Property
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