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Nanophase Devices

  • James F. Scott
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 3)

Abstract

The best nanoscale ferroelectric thin-film arrays to be produced thus far are by Alexe [516]. As shown in Fig. 17.1, these e-beam arrays of SBT are 100 nm on a side and switch very well. They are about 100 times smaller than those reported elsewhere [517]. These arrays were fabricated with minimum lateral sizes less than 100 nm by using Electron Beam Direct Writing (EBDW); such maskless direct writing eliminates the need for submicron etching. It is useful for metallic and oxide nanostructures. Chemical reactions are induced locally in a metal—organic thin film by irradiation with an e-beam. The resulting pattern is developed by dissolving the unexposed area in a specific solvent and fixed by thermal annealing.

Keywords

Rapid Thermal Annealing Bismuth Oxide Fringe Field Bismuth Titanate Good Electrical Property 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2000

Authors and Affiliations

  • James F. Scott
    • 1
  1. 1.Centre for Ferroics, Earth Sciences Dept.Cambridge UniversityCambridgeEngland

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