Wafer bonding is a technique whereby a film, including a ferroelectric film, is grown on a sacrificial substrate which is subsequently removed by etching it off from the back . It avoids the exposure of the ferroelectric semiconductor to high processing temperatures , and hence is especially applicable to systems such as ferroelectric-gated FETs (Chap. 12) or pyroelectric detectors using PST (lead scandium tantalate) — which suffers from a very high (900°C) processing temperature that prevents full integration into Si chips. (However, recently PST has been made via sol—gel at lower temperatures .)
KeywordsWafer Bonding Ferroelectric Film Chemical Solution Deposition Memory Window Pyroelectric Detector
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