Wafer Bonding

  • James F. Scott
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 3)


Wafer bonding is a technique whereby a film, including a ferroelectric film, is grown on a sacrificial substrate which is subsequently removed by etching it off from the back [488]. It avoids the exposure of the ferroelectric semiconductor to high processing temperatures [489], and hence is especially applicable to systems such as ferroelectric-gated FETs (Chap. 12) or pyroelectric detectors using PST (lead scandium tantalate) — which suffers from a very high (900°C) processing temperature that prevents full integration into Si chips. (However, recently PST has been made via sol—gel at lower temperatures [489].)


Wafer Bonding Ferroelectric Film Chemical Solution Deposition Memory Window Pyroelectric Detector 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2000

Authors and Affiliations

  • James F. Scott
    • 1
  1. 1.Centre for Ferroics, Earth Sciences Dept.Cambridge UniversityCambridgeEngland

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