Wafer bonding is a technique whereby a film, including a ferroelectric film, is grown on a sacrificial substrate which is subsequently removed by etching it off from the back . It avoids the exposure of the ferroelectric semiconductor to high processing temperatures , and hence is especially applicable to systems such as ferroelectric-gated FETs (Chap. 12) or pyroelectric detectors using PST (lead scandium tantalate) — which suffers from a very high (900°C) processing temperature that prevents full integration into Si chips. (However, recently PST has been made via sol—gel at lower temperatures .)
KeywordsGlycerol Dust Scandium Methoxyethanol Syton
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- 488c.Alexe M., Kastner G., Hesse D., and Goesele U., J. Korean Phys. Soc. 32, S1618 (1998)Google Scholar
- 489.Takeishi T. and Whatmore R. W., J. Phys. IV (France) 8, 57 (1998)Google Scholar
- 490.Budd K. D., Dey S. K., and Payne D. A., Brit. Ceram. Proc. 36, 107 (1985)Google Scholar