Abstract
Wafer bonding is a technique whereby a film, including a ferroelectric film, is grown on a sacrificial substrate which is subsequently removed by etching it off from the back [488]. It avoids the exposure of the ferroelectric semiconductor to high processing temperatures [489], and hence is especially applicable to systems such as ferroelectric-gated FETs (Chap. 12) or pyroelectric detectors using PST (lead scandium tantalate) — which suffers from a very high (900°C) processing temperature that prevents full integration into Si chips. (However, recently PST has been made via sol—gel at lower temperatures [489].)
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Scott, J.F. (2000). Wafer Bonding. In: Ferroelectric Memories. Springer Series in Advanced Microelectronics, vol 3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04307-3_14
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DOI: https://doi.org/10.1007/978-3-662-04307-3_14
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