Abstract
The first invention using high-T c superconductors on ferroelectric films (or high-dielectric paraelectric materials such as strontium titanate or BST that are nearly ferroelectric) were from the University of Colorado group involving Hermann, Yandrofski, Price, Barnes, and Scott [464, 465, 466]. These devices (Figs. 13.1 and 13.2) incorporated the superconductor merely as a ground plane, with the ferroelectric film in transverse geometry (interdigitalized electrodes, no field across the film thickness) and a micro-stripline configuration (Figs. 13.3 and 13.4) [467]. The fundamental advantage of such devices was in their ability to provide very large phase shifts (> 25%) at very low voltages, and to operate in the 10–20 GHz regime at low loss (Q > 1000, loss tangent < 1%) [468]. Prior to this work, ferroelectrics had traditionally been viewed as unsuitable for microwave devices [469]. Hermann’s group successfully fabricated devices on both YBCO (Yttrium Barium Copper Oxide) and the thallium-based high-T c superconductors. A variety of devices were made and characterized by Galt, Price, and Ono [470].
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References
Yandrofski R., et al., US Patent #5,472,935 (1995)
Herman A. M. et al., Bull. Am. Phys. Soc. 38, 689 (1993)
Hermann A. M. et al., J. Superconduct. 7, 463 (1994)
Barnes F. S., et al., Integ. Ferroelec. 8, 171 (1995)
Galt D., Price J. C., Beall J. A., and Ono R. H., Appl. Phys. Lett. 63, 3078 (1993)
Jackson J. D., Classical Electrodynamics (Wiley, New York, 1962) p.264
Scott J. F. et al., Integ. Ferroelec. 6, 189 (1995);Galt D., Price J. C., and Ono R. H., IEEE MTT-S Int. Micowave Symp. Digest (1993) p.1421;
Zafar S. et al., Appl. Phys. Lett. 72, 2820 (1998)
Theis C. D. et al., Thin Solid Films 325, 107 (1998);
Theis C. D. et al., Appl. Phys. Lett. 72, 2817 (1998) ; Kaiser D. L. et al., J. Mater. Res. (1999, in press)
Missert N. et al., IEEE Trans. Appl. Superconduct. 13, 1741 (1993)
Integrated Ferroelectrics, Vol. 22 (1998)
Jack L., US Patent #5,070,241 (1991)
Babbitt R. W. et al., US Patent #5,212,463 (1993)
Rabson T. A., Rost T. A., and Lin H., Integ. Ferroelec. 6, 15 (1995)
Smith E. B., Lin H., Rost T. A., and Rabson T., Integ. Ferroelec. 3, 85 (1993)
Kalkur T. S., Jacobs B. and Argos G., Integ. Ferroelec. 5, 177 (1994)
Lin M. and Kalkur T. S., Integ. Ferroelec. 14, 247 (1997)
Kalkur T. S., Kwor R. Y., Levenson L. and Kamerdiner L., Integ. Ferroelec. 1, 327 (1992)
Sinharoy S. et al., IEEE Trans. Ultrason. Freq. 38, 663 (1991);
Sinharoy S. et al., J. Vac. Sci. Technol. A9, 409 (1991);
Sinharoy S. et al., Integ. Ferroelec. 1, 377 (1992)
Lampe D. R., Adams D. A., Sinharoy S., and Buhay H., Integ. Ferroelec. 3, 121 (1993)
Aizawa K., Ichiki T. and Ishiwara H., MRS Proc. 310, 313 (1993)
McMillan L. D., reproduced in Scott J. F., Ferroelec. Rev. 1, 1 (1998)
Kalkur T. S., Integ. Ferroelec. 3, 351 (1993)
Autran J. L. et al., Suppl. Le Vide: Science, Technique, et Applications 275, 44 (1995) [Proc. 2nd Int. Conf. Space Charge in Solid Dielectrics, Antibes, 1995]
Watanabe Y., Tamamura M., and Matsumoto Y., Jpn. J. Appl. Phys. 35, 1564 (1996)
Ishiwara H., Jpn. J. Appl. Phys. 32, 442 (1993)
Ishiwara H., Shimamura T., and Tokumitsu E., Jpn. J. Appl. Phys. 36, 1655 (1997)
Alexe M., Pignolet A., Senz S. and Hesse D., Ferroelec. 201, 157 (1997) achieve a memory window of 3.35 V with bismuth titanate sol—gel films; for other ferroelectric gate materials, see Proc. SSDM, Jpn. J. Appl. Phys. 38 (1999)
McKee R. et al., Phys. Rev. Lett. 81, 3017 (1998)
Alexe M., Physics World 12, 21 (1999)
Alexe M., Appl. Phys. Lett. 72, 2283 (1998)
Gaucher P., Eichner D., Hector J. and Von Munch W., J. Phys. IV France 8, 235 (1998)
Alexe M. et al., J. Phys. IV France 8, 239 (1998)
Collier D. C., Integ. Ferroelec. 4, 113 (1994)
Kain A. et al., Integ. Ferroelec. 8, 45 (1995)
Jackson C. M. et al., Integ. Ferroelec. 4, 121 (1994)
Wilber W., et al., Integ. Ferroelec. 19, 149 (1998)
Sengupta L. C. et al., Integ. Ferroelec. 8, 77 (1995)
Babbitt R. W., Koscica T. E., and Drach W. C., Microwave J. 35, 63 (1992)
Babbitt R. W. et al., Integ. Ferroelec. 8, 65 (1995)
Tokunaga M., J. Phys. Soc. Jpn. 56, 1653 (1987)
Tokunaga M., J. Phys. Soc. Jpn. 57, 4275 (1988)
The original work on pure cadmium titanate [Smolensky A., JETP 20, 137 (1958)] and on lead pyrochlore [Hulm A., Phys. Rev. 92, 504 (1953)] did not demonstrate switching, but on the basis of recent work on mixed crystals of form Ca2 — 2x Pb2x Nb2 O7 and Cax Cdl — x TiO3, it is clear that the pure materials are ferroelectric at and below the stated temperatures
Petrov P. K. et al., J. Appl. Phys. 84, 3134 (1998)
Kozyrev A. B. et al., J. Appl. Phys. 84, 3325 (1998)
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Scott, J.F. (2000). Ferroelectrics-on-Superconductor Devices: Phased-Array Radar and 10–100 GHz Devices. In: Ferroelectric Memories. Springer Series in Advanced Microelectronics, vol 3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04307-3_13
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DOI: https://doi.org/10.1007/978-3-662-04307-3_13
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