Abstract
All the devices discussed so far in this book have destructive READ operations. Since a memory may be written perhaps only 106 times but read 1012 times, this reset operation involves a lot of switching and fatigue that could be eliminated in a NonDestructive Read-Out device (NDRO).
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References
Rabson T. A., Rost T. A., and Lin H., Integ. Ferroelec. 6, 15 (1995)
Smith E. B., Lin H., Rost T. A., and Rabson T., Integ. Ferroelec. 3, 85 (1993)
Kalkur T. S., Jacobs B. and Argos G., Integ. Ferroelec. 5, 177 (1994)
Lin M. and Kalkur T. S., Integ. Ferroelec. 14, 247 (1997)
Kalkur T. S., Kwor R. Y., Levenson L. and Kamerdiner L., Integ. Ferroelec. 1, 327 (1992)
Sinharoy S. et al., IEEE Trans. Ultrason. Freq. 38, 663 (1991);
Sinharoy S. et al., J. Vac. Sci. Technol. A9, 409 (1991);
Sinharoy S. et al., Integ. Ferroelec. 1, 377 (1992)
Lampe D. R., Adams D. A., Sinharoy S., and Buhay H., Integ. Ferroelec. 3, 121 (1993)
Aizawa K., Ichiki T. and Ishiwara H., MRS Proc. 310, 313 (1993)
McMillan L. D., reproduced in Scott J. F., Ferroelec. Rev. 1, 1 (1998)
Kalkur T. S., Integ. Ferroelec. 3, 351 (1993)
Autran J. L. et al., Suppl. Le Vide: Science, Technique, et Applications 275, 44 (1995) [Proc. 2nd Int. Conf. Space Charge in Solid Dielectrics, Antibes, 1995]
Watanabe Y., Tamamura M., and Matsumoto Y., Jpn. J. Appl. Phys. 35, 1564 (1996)
Ishiwara H., Jpn. J. Appl. Phys. 32, 442 (1993)
Ishiwara H., Shimamura T., and Tokumitsu E., Jpn. J. Appl. Phys. 36, 1655 (1997)
Alexe M., Pignolet A., Senz S. and Hesse D., Ferroelec. 201, 157 (1997) achieve a memory window of 3.35 V with bismuth titanate sol—gel films; for other ferroelectric gate materials, see Proc. SSDM, Jpn. J. Appl. Phys. 38 (1999)
McKee R. et al., Phys. Rev. Lett. 81, 3017 (1998)
Alexe M., Physics World 12, 21 (1999)
Alexe M., Appl. Phys. Lett. 72, 2283 (1998)
Gaucher P., Eichner D., Hector J. and Von Munch W., J. Phys. IV France 8, 235 (1998)
Alexe M. et al., J. Phys. IV France 8, 239 (1998)
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Scott, J.F. (2000). Nondestructive Read-Out Devices. In: Ferroelectric Memories. Springer Series in Advanced Microelectronics, vol 3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04307-3_12
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DOI: https://doi.org/10.1007/978-3-662-04307-3_12
Publisher Name: Springer, Berlin, Heidelberg
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