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Ferroelectric Memories pp 165–174Cite as

Deposition and Processing

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Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 3))

Abstract

A variety of deposition techniques are employed for ferroelectric thin film capacitors to be used in memory devices. These include sputtering [382], MOCVD (Metal-Organic Chemical Vapour Deposition) [383], MOD (MetalOrganic Decomposition) [384], PLD (Pulsed Laser Deposition) [385], solgel (solution—gelation) spin-on techniques [386], and a mist deposition in which stoichiometrically correct submicron droplets are sprayed into the deposition chamber [387]. The MOCVD techniques include a flash process [388, 389, 390, 391, 392] in which the precursor solutions are delivered to the deposition chamber in liquid form (due to their low volatilities) and then flashed into the vapour phase via incandescent lights or laser sources at a shower head delivery point just below the wafer. These flash systems all differ from each other (Isobe’s achieves the highest deposition rate), and all have separate patents. What they share is the ability to handle viscous precursors with low vapour pressures. [The LG Semiconductor Corp. flash process for BST utilizes relatively viscous barium- and strontium-(THD)2-tetraglyme, together with Ti(O-iso-Pr)(THD)2.] True CVD is not used; that is, vapour deposition with chloride or hydride precursors, since halogen contamination is a problem. MBE (Molecular Beam Epitaxy) is generally not used, with one or two research exceptions [393]. And thick film techniques such as spray pyrolysis, slip-casting, etc., are not used.

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Authors and Affiliations

  1. Centre for Ferroics, Earth Sciences Dept., Cambridge University, Downing Street, Cambridge, CB2 3EQ, England

    Professor James F. Scott

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  1. Professor James F. Scott
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Scott, J.F. (2000). Deposition and Processing. In: Ferroelectric Memories. Springer Series in Advanced Microelectronics, vol 3. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04307-3_11

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  • DOI: https://doi.org/10.1007/978-3-662-04307-3_11

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  • Print ISBN: 978-3-642-08565-9

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