Abstract
The fourth key process in silicon technology apart from film production, lithography and film patterning, is the doping of the p- and n-type regions in monocrystalline and polycrystalline silicon. Boron (for p-type regions) and arsenic, phosphorus and antimony (for n-type regions) are the preferred dopant atoms that are currently used.
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References
Ruge, I.; Mader, H.: Halbleiter-Technologie, 3. Aufl. Berlin: Springer 1991, S. 82ff.
Ryssel, H.; Ruge, I.: Ionenimplantation. Stuttgart: Teubner 1978
Glawischnig, H.; Noack, N.: Ion Implantation. Science and Technology. Orlando, Fla.: Academic 1984, p. 313
Lindhard, J.; Schwarff, M.; Schiott, H.: Mat. Fys. Med. Dan. Vid. Selsk 33 (1963) 1
Morgan, D.V.: Channeling: Theory, Observation and Applications. New York: Wiley 1973
Hofker, W.K.: Philips Res. Rep. Suppl. 8 (1975)
Tsai, M.Y.; Streetman, B.G.: J. Appl. Phys. 50 (1979) 183
Runge, H.: Phys. Stat. Sol. (A) 39 (1977) 595
Hunter, W.R., et al.: IEEE Trans. Electron Devices ED-26 (1979) 353
Crowder, B.L.: J. Electrochem. Soc. 118 (1971) 943
Christel, L.A.; Gibbons, J.F.; Mylroie, S.: Nuclear Instrum. Methods 182 /183 (1981) 187
Sze, S.M.: VLSI Technology. New York: McGraw-Hill 1983, p. 169–218
Antoniadis. D.A.; Hansen, S.E.; Dutton, R.W.: IEEE Trans. Electron Devices ED-26 (1979) 490
Lorenz, J.; Pelka, J.; Ryssel, H.; Sachs, A.; Seidl, A.; Svoboda, M.: IEEE Trans. Electron Devices ED-32 (1984) 1977
Bergholz, W.; Zoth, G.; Wendt, H.; Sauter, S.; Asam, G.: Siemens Forsch.- und Entwickl.-Ber 16 (1987) 241
Gösele, F.W.; Mehrer, U.; Seeger, A.: Diffusion in Crystalline Solids. New York: Academic 1984, p. 64
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Widmann, D., Mader, H., Friedrich, H., Heywang, W., Müller, R. (2000). Doping technology. In: Technology of Integrated Circuits. Springer Series in ADVANCED MICROELECTRONICS, vol 2. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04160-4_6
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DOI: https://doi.org/10.1007/978-3-662-04160-4_6
Publisher Name: Springer, Berlin, Heidelberg
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