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Doping technology

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Book cover Technology of Integrated Circuits

Part of the book series: Springer Series in ADVANCED MICROELECTRONICS ((MICROELECTR.,volume 2))

Abstract

The fourth key process in silicon technology apart from film production, lithography and film patterning, is the doping of the p- and n-type regions in monocrystalline and polycrystalline silicon. Boron (for p-type regions) and arsenic, phosphorus and antimony (for n-type regions) are the preferred dopant atoms that are currently used.

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Authors and Affiliations

  1. semiconductor technology development, Infineon Technologies, Balanstraße 73, D-81609, Munich, Germany

    Dr.-Ing. Dietrich Widmann

  2. Department of Electrical Engineering and Information Technologies, Munich University of Applied Sciences, Lothstraße 34, D-80335, Munich, Germany

    Prof. Dr.-Ing. Hermann Mader

  3. TELA Versicherungs AG, Pranner Straße 8, D-80333, Munich, Germany

    Dr.-Ing. Hans Friedrich

  4. Technical University Munich, Arcisstraße 21, D-80333, Munich, Germany

    Prof. Dr. rer.nat. Walter Heywang & Prof. Dr. techn. Rudolf Müller

Authors
  1. Dr.-Ing. Dietrich Widmann
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  2. Prof. Dr.-Ing. Hermann Mader
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  3. Dr.-Ing. Hans Friedrich
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  4. Prof. Dr. rer.nat. Walter Heywang
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  5. Prof. Dr. techn. Rudolf Müller
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© 2000 Springer-Verlag Berlin Heidelberg

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Widmann, D., Mader, H., Friedrich, H., Heywang, W., Müller, R. (2000). Doping technology. In: Technology of Integrated Circuits. Springer Series in ADVANCED MICROELECTRONICS, vol 2. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04160-4_6

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  • DOI: https://doi.org/10.1007/978-3-662-04160-4_6

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-08547-5

  • Online ISBN: 978-3-662-04160-4

  • eBook Packages: Springer Book Archive

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