Skip to main content
SpringerLink
Log in

Electronic Properties of Defects

  • Chapter
Fundamentals of Semiconductors

  • 841 Accesses

Abstract

One reason why semiconductors are so useful for device applications is that their electrical properties can be modified significantly by the incorporation of small amounts of impurities or other kinds of defects. However, while one type of defect can make a semiconductor useful for fabricating a device, another type can have undesirable effects which render the device useless. The quantity of defects necessary to change the properties of a semiconductor is often considerably less than one defect atom per million host atoms.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 74.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Reference

  1. 1 G. Wannier: Elements of Solid State Theory (Cambridge Univ. Press, Cambridge 1959), for discussions of Wannier functions

    Google Scholar 

  2. W. Kohn: Shallow impurity states in silicon and germanium. Solid State Physics 5, 257-320 ( Academic, New York 1957 )

    Google Scholar 

  3. J. M. Ziman: Principles of the Theory of Solids, 2nd edn (Cambridge Univ. Press, Cambridge 1972), for discussion of the effective-mass approximation, see Chap. 6, pp. 147 - 176

    Google Scholar 

  4. R. K. Watts: Point Defects in Crystals ( Wiley-Interscience, New York 1977 )

    Google Scholar 

  5. N. Chand, T. Henderson, J. Klem, W. T. Masselink, R. Fischer, Y.-C. Chang, H. Morkoç: Comprehensive analysis of Si-doped A1XGat_XAs (x=0 to 1): Theory and experiment. Phys. Rev. B 30, 4481 - 4492 (1984)

    Article  ADS  Google Scholar 

  6. M. Mizuta, M. Tachikawa, H. Kukimoto, S. Minomura: Direct evidence for the DX center being a substitutional donor in AlGaAs alloy system. Jpn. J. Appl. Phys. 24, L143 - 146 (1985)

    Article  ADS  Google Scholar 

  7. D. J. Chadi, K. J. Chang: Energetics of DX-center formation in GaAs and Al,Gai „As alloys. Phys. Rev. 39, 10063 - 10074 (1989)

    Google Scholar 

  8. J. Dabrowski, M. Scheffler: Defect metastability in III-V compounds. Mater. Sci. Forum 83-87, 735 - 750 (1992)

    Article  Google Scholar 

  9. W. Kohn, J. M. Luttinger: Theory of donor levels in silicon. Phys. Rev. 97, 1721 (1955); Theory of donor states in silicon. ibid. 98, 915 - 922 (1955)

    ADS  Google Scholar 

  10. R. A. Faulkner: Higher donor excited states for prolate-spheroid conduction bands: A re-evaluation of silicon and germanium. Phys. Rev. 184, 713 - 721 (1969)

    Article  ADS  Google Scholar 

  11. S. Pantelides, C. T. Sah: Theory of localized states in semiconductors. I. New results using an old method. Phys. Rev. B 10, 621-637 (1974) and II. The pseudo impurity theory applications to shallow and deep donors in silicon. ibid. 638 - 658 (1974)

    Google Scholar 

  12. N. Lipari, A. Baldereschi: Interpretation of Acceptor Spectra in Semiconductors. Solid State Commun. 25, 665 - 668 (1978)

    Article  ADS  Google Scholar 

  13. W. Kohn. D. Schechter: Theory of acceptor levels in germanium. Phys. Rev. 99, 1903 - 1904 (1955)

    Article  ADS  Google Scholar 

  14. A. Baldereschi, N. O. Lipari: Spherical model of shallow acceptor states in semiconductors. Phys. Rev. B 8, 2697 - 2709 (1973)

    Google Scholar 

  15. A. Baldereschi, N. O. Lipari: Cubic contributions to the spherical model of shallow acceptor states. Phys. Rev. B 9, 1525 - 1539 (1974)

    Google Scholar 

  16. M. Willatzen, M. Cardona, N. E. Christensen: Spin-orbit coupling parameters and g-factors of II—VI zincblende materials. Phys. Rev. B 51, 17992 - 17994 (1995)

    Google Scholar 

  17. M. A. Hasse, J. Qiu, J. M. DePuydt, H. Cheng: Blue-green laser diode. Appl. Phys. Lett. 59, 1272 - 1274 (1991)

    Article  ADS  Google Scholar 

  18. H. Jeon, J. Ding, W. Patterson, A. V. Nurmikko, W. Xie, D. C. Grillo, M. Kobayashi, R. L. Gunshor: Blue-green injection laser diodes in (Zn,Cd)Se/ ZnSe quantum wells. Appl. Phys. Lett. 59, 3619 - 3621 (1991)

    Article  ADS  Google Scholar 

  19. S. Pantelides: The electronic structure of impurity and defect states in semiconductors. Rev. Mod. Phys. 50, 797 - 858 (1978)

    Article  ADS  Google Scholar 

  20. P.M. Mooney: Deep donor levels (DX centers) in III—V semiconductors. J. Appl. Phys. 67, R1 - 26 (1990)

    Article  ADS  Google Scholar 

  21. N.F. Mott: Metal-Insulator Transition ( Taylor and Francis, London 1990 ) p. 76

    Google Scholar 

  22. 22 D. J. Chadi: Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors. Phys. Rev. Lett. 72, 534-537 (1994)

    Google Scholar 

  23. E. N. Economou: Green’s Functions in Quantum Physics, 2nd edn., Springer Ser. Solid-State Sci., Vol.7 (Springer, Berlin, Heidelberg 1983 ) pp. 97 - 125

    Google Scholar 

  24. M. Lannoo, J. Bourgoin: Point Defects in Semiconductors I, Theoretical Aspects, Springer Ser. Solid-State Sci., Vol. 22 (Springer, Berlin, Heidelberg (1981) pp. 68 - 152

    Google Scholar 

  25. 25 E A. M. Dirac: The Principles of Quantum Mechanics (Oxford Univ. Press, Oxford 1967) pp. 58-61

    Google Scholar 

  26. H. P. Hjalmarson, P. Vogl, D. J. Wolford, J. D. Dow: Theory of substitutional deep traps in covalent semiconductors. Phys. Rev. Lett. 44, 810 - 813 (1980)

    Google Scholar 

  27. 27 J. C. Phillips: Covalent Bonding in Crystals, Molecules, and Polymers (Univ. Chicago Press, Chicago 1969) p. 232, Table E. 1

    Google Scholar 

  28. R. A. Faulkner: Toward a theory of isoelectronic impurities in semiconductors. Phys. Rev. 175, 991 - 1009 (1968)

    Article  ADS  Google Scholar 

  29. D. G. Thomas, J. J. Hopfield: Isoelectronic traps due to nitrogen in GaP. Phys. Rev. 150, 680 - 703 (1966)

    Article  ADS  Google Scholar 

  30. D. J. Wolford, J. A. Bradley, K. Fry, J. Thompson: The nitrogen isoelectronic trap in GaAs, in Physics of Semiconductors 1984, ed. by J. D. Chadi, W. A. Harrison ( Springer, New York 1984 ) pp. 627 - 630

    Google Scholar 

  31. E. Cohen, M. D. Sturge: Excited states of excitons bound to nitrogen pairs in GaP. Phys. Rev. B 15, 1039 - 1051 (1977)

    Article  ADS  Google Scholar 

  32. W. Y. Hsu, J. D. Dow, D. J. Wolford, B. G. Streetman: Nitrogen isoelectronic trap in GaAsi_XPX. II. Model calculation of the electronic states Nr and Nx at low temperature. Phys. Rev. B 16, 1597 - 1615 (1977)

    Article  ADS  Google Scholar 

  33. S. Pantelides (ed.): Deep Centers in Semiconductors, A State of the Art Approach (Gordon and Breach, New York 1986) Chaps. 1 and 7

    Google Scholar 

  34. A. Messiah: Quantum Mechanics (North-Holland, Amsterdam 1961), pp. 10541060

    Google Scholar 

General Reading

  • Economou E. N.: Green’s Functions in Quantum Physics, 2nd edn., Springer Ser. Solid-State Sci., Vol. 7 ( Springer, Berlin, Heidelberg 1983 )

    Google Scholar 

  • Lannoo M., J. Bourgoin: Point Defects in Semiconductors I, Theoretical Aspects, Springer Ser. Solid-State Sci., Vol. 22 ( Springer, Berlin, Heidelberg 1981 )

    Google Scholar 

  • Pantelides S.: The Electronic Structure of Impurity and Defect States in Semiconductors. Rev. Mod., Phys. 50, 797 - 858 (1978)

    Article  ADS  Google Scholar 

  • Pantelides S. (ed.): Deep Centers in Semiconductors, A State of the Art Approach ( Gordon and Breach, New York 1986 )

    Google Scholar 

  • Schubert E. E: Doping in III—V Semiconductors (Cambridge Univ. Press, Cambridge 1993 )

    Google Scholar 

  • Wannier G.: Elements of Solid State Theory (Cambridge Univ. Press, Cambridge 1959), for discussions of Wannier functions

    Google Scholar 

  • Watts R. K.: Point Defects in Crystals ( Wiley-Interscience, New York 1977 )

    Google Scholar 

  • Ziman J. M.: Principles of the Theory of Solids,2nd edn. (Cambridge Univ. Press, Cambridge 1972), for discussions of the effective-mass approximation

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Physics, University of California, 94720-7300, Berkeley, CA, USA

    Professor Dr. Peter Y. Yu

  2. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany

    Professor Dr., Dres. h.c. Manuel Cardona

Authors
  1. Professor Dr. Peter Y. Yu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Professor Dr., Dres. h.c. Manuel Cardona
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

Copyright information

© 1999 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Yu, P.Y., Cardona, M. (1999). Electronic Properties of Defects. In: Fundamentals of Semiconductors. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-03848-2_4

Download citation

  • DOI: https://doi.org/10.1007/978-3-662-03848-2_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-03850-5

  • Online ISBN: 978-3-662-03848-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation